Development of a dielectric barrier discharge (DBD) cryo-microplasma: generation and diagnostics

Ishihara, Daisuke; Noma, Yukio; Stauss, Sven; Sai, Masaki; Tomai, Takaaki; Terashima, Kazuo

doi:10.1088/0963-0252/17/3/035008

Cited by 32 publications

(37 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From this numerical estimation, it is said that a much smaller amount of root-mean-square voltage is applied to SMMAP compared to other plasma sources, such as dc and ac. 21,22 …”

Section: ͑3͒mentioning

confidence: 99%

Characterizations of strip-line microwave micro atmospheric plasma and its application to neutralization

Ogata

Terashima

2009

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

A microwave-induced plasma source: Characterization and application for the fast deposition of crystalline silicon films Characterization of the behavior of chemically reactive species in a nonequilibrium inductively coupled argonhydrogen thermal plasma under pulse-modulated operation Characteristics of an atmospheric microwave-induced plasma generated in ambient air by an argon discharge excited in an open-ended dielectric discharge tubeIn this work, we estimate the plasma parameters of strip-line microwave micro atmospheric plasma ͑SMMAP͒ such as rotational temperature ͑T r ͒ both from OH and N 2 rotational transitions ͑610-770 and 770-980 K in Ar, respectively͒, electron density ͑N e ͒ from Stark broadening ͑about 10 13 / cm 3 in mixture of Ar and H 2 ͒, and the distribution of electric field before ignition of SMMAP ͑5 ϫ 10 4 V / m at maximum, and applied voltage less than 5 V͒. Since the lower applied voltage of SMMAP might enable us to conduct efficient processing without electrostatic damage ͑ESD͒, we applied jet-type SMMAP to neutralization. The result of neutralization showed that it can reduce surface charge from Ϯ1000 to Ϯ100 V for 0.2 s at 10 W with Ar gas flow within 4 V offset voltage, which provides efficient plasma processing without ESD.

show abstract

“…From this numerical estimation, it is said that a much smaller amount of root-mean-square voltage is applied to SMMAP compared to other plasma sources, such as dc and ac. 21,22 …”

Section: ͑3͒mentioning

confidence: 99%

Characterizations of strip-line microwave micro atmospheric plasma and its application to neutralization

Ogata

Terashima

2009

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…As a plasma source that can generate lower temperature plasmas without reducing the input power to the plasma, the cryoplasma jet was developed [8]. In this plasma source, gas supplied from a cylinder is cooled by liquid nitrogen, after which plasma is generated.…”

Section: Introductionmentioning

confidence: 99%

Temperature Controllable Atmospheric Plasma Source

Oshita

Kawano

Takamatsu

et al. 2015

IEEE Trans. Plasma Sci.

View full text Add to dashboard Cite

An atmospheric pressure plasma source in which the gas temperature can be accurately controlled from below freezing point up to a high temperature has been developed. In general plasma devices, an electrical discharge is passed through a gas at about room temperature to generate plasma, so the plasma is at a temperature higher than room temperature; moreover, the gas temperature is determined by the discharge condition such as discharge power and plasma gas flow rate, so accurate temperature control is difficult. In the plasma source that has been developed in this research, the gas that is to be supplied to the discharge unit is first cooled using a gas cooler and then heated by a heater. The gas temperature of the produced plasma is measured, and feedback is sent to the heater. Thus, plasma at a desired temperature can be generated. Gas temperature control of the plasma over a range from −54°C to +160°C with a standard deviation of 1°C was realized. Spectroscopic characteristics of generated plasma were investigated. This plasma source/technique will realize that effective plasma is applicable for heat-sensitive materials such as paper, textile, polymer, and especially human tissue. Furthermore, it enables us to generate the plasma at optimal gas temperature for chemical reaction of each plasma treatment.Index Terms-Atmospheric plasma, biomedical electronics, plasma medicine, surface treatment.Hiroaki Kawano was born in Oita, Japan, in 1992. He received the B.E. degree in electrical and electronic engineering from the Oita National College of Technology, Oita, in 2014. He is currently pursuing the M.E. degree with the Tokyo Institute of Technology, Yokohama, Japan.

show abstract

“…17 So far, both jet-type 18 and parallel plate dielectric barrier discharge (DBD) cryoplasmas 19 have been investigated down to temperatures of 4.2 K in He. 17 So far, both jet-type 18 and parallel plate dielectric barrier discharge (DBD) cryoplasmas 19 have been investigated down to temperatures of 4.2 K in He.…”

Section: Introductionmentioning

confidence: 99%

Ashing of photoresists using dielectric barrier discharge cryoplasmas

Stauss¹,

Mori²,

Muneoka³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

Self Cite

View full text Add to dashboard Cite

Plasma ashing of photoresists is a critical step in advanced microelectronics manufacturing as it often leads to extensive damage in porous organosilicate low-j dielectrics and hinders the use of highly porous films in interconnects. To reduce plasma damage, the authors investigated the feasibility of ashing a 248-nm photoresist with cryoplasma. The authors ashed photoresist-coated silicon wafers with dielectric barrier discharge microplasma generated at temperatures of 170-291 K, a pressure of 100 Torr, applied voltages of V appl ¼ 0:8 À 1:6 kV, and a frequency of f ¼ 20 kHz in both Ar=O 2 and Ar=O 2 /N 2 gas mixtures. While the ashing rates at 170 K in Ar=O 2 decreased to about 20% of the ashing rates achieved at room temperature and 240 K, the addition of N 2 to the plasma gas enhanced the ashing rates by a factor of 1.5-2. Optical emission spectroscopy measurements of the plasmas showed that, in the Ar=O 2 =N 2 mixture, the main reactive species are N 2 radicals; x-ray photoelectron spectra of the ashed photoresists indicated that ashing is initiated from oxygen-containing functional groups of the photoresist. This study showed that decreased ashing rates at low plasma gas temperatures can be significantly enhanced by adjusting the plasma chemistry and that cryoplasma offers a viable process to minimize the damage from ashing of low-j dielectric materials in interconnects, which will allow nanoelectronic devices to fully benefit from the introduction of such porous materials.

show abstract

Development of a dielectric barrier discharge (DBD) cryo-microplasma: generation and diagnostics

Cited by 32 publications

References 14 publications

Characterizations of strip-line microwave micro atmospheric plasma and its application to neutralization

Characterizations of strip-line microwave micro atmospheric plasma and its application to neutralization

Temperature Controllable Atmospheric Plasma Source

Ashing of photoresists using dielectric barrier discharge cryoplasmas

Contact Info

Product

Resources

About