Development of a room temperature thin film In&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt;, ZnO and SnO&lt;inf&gt;2&lt;/inf&gt; ozone sensor

Arshak, K.; Hickey, G.; Forde, E.; Harris, John A.

doi:10.1109/isie.2007.4374831

Cited by 3 publications

(3 citation statements)

References 9 publications

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“…Doping In 2 O 3 with approximately 10 atom % tin oxide increases the electrical conductivity greatly and yields indium tin oxide (ITO), the most widely used TCO in applications including flat panel and touch screen displays, , thin film transistors, − liquid crystal displays, solar glasses, and energy-efficient window coatings. , For optimal performance and utilization of the expensive indium, all of these applications need precise control over the layer thickness and composition. In addition, many applications such as next-generation photovoltaics require the ability to deposit thin TCO layers on very high aspect ratio structures or high surface area materials. , High-quality In 2 O 3 thin films have been deposited using various methods, including evaporation, ,− sputtering, ,,− sol–gel, , spray pyrolysis, ,, chemical vapor deposition (CVD), − and atomic layer deposition (ALD). ,− Currently, physical vapor deposition (PVD) methods such as evaporation and sputtering are used commercially for depositing In 2 O 3 and ITO thin films. However, these processes are strictly line-of-site and are not suitable for coating complex 3D, high aspect ratio substrates.…”

Section: Introductionmentioning

confidence: 99%

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Mane

Allen

Kanjolia³

et al. 2016

J. Phys. Chem. C

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We investigated the atomic layer deposition (ALD) of indium oxide (In2O3) thin films using alternating exposures of trimethylindium (TMIn) and a variety of oxygen sources: ozone (O3), O2, deionized H2O, and hydrogen peroxide (H2O2). We used in situ quartz crystal microbalance measurements to evaluate the effectiveness of the different oxygen sources and found that only O3 yielded viable and sustained In2O3 growth with TMIn. These measurements also provided details about the In2O3 growth mechanism and enabled us to verify that both the TMIn and O3 surface reactions were self-limiting. In2O3 thin films were prepared and characterized using X-ray diffraction, ultraviolet–visible spectrophotometry, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and scanning electron microscopy. The electrical transport properties of these layers were studied by Hall probe measurements. We found that, at deposition temperatures within the range of 100–200 °C, the In2O3 growth per cycle was nearly constant at 0.46 Å/cycle and the films were dense and pure. The film thickness was highly uniform (<0.3% variation) along the 45 cm length of our tubular ALD reactor. At higher growth temperatures the In2O3 growth per cycle increased due to thermal decomposition of the TMIn. The ALD In2O3 films showed resistivities as low as 3.2 × 10–3 Ω cm, and carrier concentrations as large as 7.0 × 1019 cm–3. This TMIn/O3 process for In2O3 ALD should be suitable for eventual scale-up in photovoltaics.

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Section: Introductionmentioning

confidence: 99%

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Mane

Allen

Kanjolia³

et al. 2016

J. Phys. Chem. C

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“…Previous work by the authors have shown that a 40nm thick sensing layer deposited at a rate of 0.6 -0.8 nm/s gives the most promising results for use as an ozone sensor [12]. As a result these are the parameters utilized and held constant in this work.…”

Section: Variation Of Sensing Layermentioning

confidence: 94%

“…The effect of varying the deposition parameters of the metal oxide-sensing layer was shown to have a major impact on the performance of the sensing device [12]. Figure 3 shows how sensing layer thickness and deposition rate can affect the overall sensitivity of the sensor.…”

Section: Deposition Parametersmentioning

confidence: 99%

Development of novel room temperature ozone sensors for health and safety applications

Arshak

Hickey

Forde

et al. 2007

2007 30th International Spring Seminar on Electronics Technology (ISSE)

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A new type of highly sensitive ozone (03) metal oxide gas sensor has been developed. Various mixtures of In203, ZnO and SnO2 were deposited on alumina substrates containing indigitated electrodes by means of Vacuum Thermal Evaporation (VTE). Deposition rate of the sensing layer was variedfrom 0.3 nm/s -1.4 nm/s. The highest sensitivity of the sensors was found at a deposition rate of 1.2 nm/s -1.4 nm/s. In addition the 03 sensors were found to perform best with a 40 nm thick sensing layer. With such sensors, environmentally relevant ozone concentrations can be measured (0 -500 ppb (parts per billion)). Different combinations of this material were investigated and compared focusing on the sensitivity and performance when exposed to ozone. Most of the current metal oxide ozone sensors on the market have the disadvantage of requiring operation at elevated temperatures (200°C -600°C) [1]. Room temperature operation has some major advantages over elevated temperature operation such as, reduced fabrication costs, reduced operating costs, as well as ease of implementation into portable/handheld devices.

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High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Yoo,

Lee,

Kim

et al. 2024

Applied Surface Science

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Development of a room temperature thin film In<inf>2</inf>O<inf>3</inf>, ZnO and SnO<inf>2</inf> ozone sensor

Cited by 3 publications

References 9 publications

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Development of novel room temperature ozone sensors for health and safety applications

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

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