Development of a silver ion source using nanosecond pulses of a Nd:YAG laser at different wavelengths

Khalil, A. H.; Gondal, M.A.

doi:10.1016/j.nimb.2009.06.120

Cited by 19 publications

(10 citation statements)

References 33 publications

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“…The saturation in T e and N e at higher laser intensity for untreated and treated samples for SP and DP excitation may be due to plasma shielding, i.e., reflection and/or absorption of the laser photons by the plasma plume, which depends upon the plasma frequency. The prompt electrons released from Si target excite and ionize the ambient molecules, which give enhancement in the emission intensity of spectral lines especially in the DP configuration [46][47][48] and treated samples.…”

Section: Plasma Parametersmentioning

confidence: 99%

Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

Khalil

2015

Appl. Phys. A

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Two Nd:YAG lasers working in pulsed modes are combined in the same direction (collinear arrangement) to focus on silicon (Si) crystals in reduced oxygen atmosphere (0.1 mbar) for double-pulse laser-induced breakdown spectroscopy (DP-LIBS) system. Silicon crystals of (100) and (111) orientations were investigated, and Si samples were measured either without prior treatment (''untreated'') or after fabrication of nano-pores (''treated''). Nano-pores are produced by metal coating and by chemical etching. DP-LIBS spectra were compared for different Si samples (untreated, treated, (100) and (111) orientations), for double-pulse (DP) (with 266 nm pulse followed by 1064 nm pulse) excitation and for different delay times (times between the excitation laser pulse and the detection ICCD gate); treatment by chemical etching has been studied as well. The intensity of the atomic line Si I at 288.16 nm was enhanced by a factor of about three by using the DP-LIBS signals as compared to the single-pulse (SP) signal which could increase the sensitivity of the LIBS technique. This study proved that an optimized value of the etching time of Si during etching by chemical processes and short delay times are required. Plasma parameters [the electron temperature (T e ) and the electron number density (N e )] were calculated from measured SP-and DP-LIBS spectra. The most important result of this study is the much higher DP-LIBS intensity observed on Si (100) as compared to Si (111) for measurements under the same experimental conditions. This study could provide important reference data for the design and optimization of DP-LIBS systems involved in plasma-facing components diagnostics.

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Section: Plasma Parametersmentioning

confidence: 99%

Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

Khalil

2015

Appl. Phys. A

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“…Ion flux, energy and velocity distribution are important to understand the mechanism of ions applications. The dynamics of ion sources released from copper, silver, stainless steel and titanium plasmas at different laser wavelengths have been studied [16][17][18][19]. A Faraday-cup ion probe is employed to collect and detect the released ions.…”

Section: Introductionmentioning

confidence: 99%

Development of double-pulse lasers ablation system for generating gold ion source under applying an electric field

Khalil

2015

Optics & Laser Technology

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“…Mechanical sputtering of metals was also employed [9], but the main drawback of this approach was a poor stability of extracted current. The great advantage of laser ablation ion sources [10,11] is the fact that they can ionize any solid material and give possibility of effective production of multiply charged ions. Finally, vapors of high melting point materials could be produced using discharge plasma for heating a container placed inside the ionization chamber.…”

Section: Introductionmentioning

confidence: 99%

Plasma Ion Source with an Internal Evaporator

et al. 2011

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A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current (I a = 1.2 A). The currents of 50 µA (Al + ) and 70 µA (Bi + ) were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.

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Development of a silver ion source using nanosecond pulses of a Nd:YAG laser at different wavelengths

Cited by 19 publications

References 33 publications

Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

Development of double-pulse lasers ablation system for generating gold ion source under applying an electric field

Plasma Ion Source with an Internal Evaporator

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