Development of a-SiO_x:H solar cells with very highV_oc × FF product

Abstract

In this study, deposition conditions for making a-SiO x :H are investigated systematically in order to obtain a high band gap material. We found that at given optical band gap, a-SiO x :H with favorable opto-electronic properties can be obtained when deposited using low CO 2 flow rates and deposition pressures. We also found that a low radio frequency power density is required in order to limit the effect of ion bombardment on the material properties of i-a-SiO x :H and thereby the solar cell performance. In addition, by decreasing the heater temperature from 300 to 200°C when making the i-a-SiO x :H, the V oc can be increased. We employed optimized p-doped and n-doped a-SiO x :H films into the p-i-n solar cells, and as a consequence, a high V oc of over 1 V and high fill factor (

Design of 4-terminal Solar Modules Combining Thin-film Wide-Bandgap Top Cells and c-Si Bottom Cells

“…4(b) and the curve is mathematically fitted with a polynomial function so that the IBC cell efficiency can be expressed by J sc a single variable. Therefore, the efficiency of a hybrid tandem module ( ) with the given IBC bottom cell can be expressed by the equation: [9,10,11]. This offers the possibility to make a hybrid tandem module with an efficiency of over 24%.…”

Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface

“…To further the efficiency, we sought to enhance characteristics of the top cell in terms of open circuit voltage (V oc ) and the response at short-wavelength regions by employing intrinsic amorphous silicon oxide (a-SiO x :H) thin films with wide bandgaps. The a-SiO x :H solar cells delivered better V oc than conventional a-Si:H solar cells [11][12][13][14][15]. However, the efficiency itself was relatively lower than that of a-Si:H cells because of low J sc .…”

Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

“…More recently it was found that the band gap of a-Si:H can also be increased to 2 eV or more by incorporating oxygen at a concentration of only about 3 at% [22,23], while maintaining good opto-electrical properties. This has opened up new possibilities for designing thin-film silicon based multi-junction solar cells.…”