Development of a SnS Film Process for Energy Device Applications

Abstract

Tin monosulfide (SnS) is a promising p-type semiconductor material for energy devices. To realize the device application of SnS, studies on process improvement and film characteristics of SnS is needed. Thus, we developed a new film process using atomic layer deposition (ALD) to produce SnS films with high quality and various film characteristics. First, a process for obtaining a thick SnS film was studied. An amorphous SnS2 (a-SnS2) film with a high growth rate was deposited by ALD, and a thick SnS film was obtained using phase transition of a-SnS2 film by vacuum annealing. Subsequently, we investigated the effect of seed layer on formation of SnS film to verify the applicability of SnS to various devices. Separately deposited crystalline SnS and SnS2 thin films were used as seed layer. The SnS film with a SnS seed showed small grain size and high film density from the low surface energy of the SnS seed. In the case of the SnS film using a SnS2 seed, volume expansion occurred by vertically grown SnS grains due to a lattice mismatch with the SnS2 seed. The obtained SnS film using the SnS2 seed exhibited a large reactive site suitable for ion exchange.

Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur-Mediated Sulfurization of Ultrathin SnO2 Films

“…37,58−60 The SnS 2 phase is generally obtained below 350 °C, while above this temperature thermal decomposition occurs, and SnS is formed by a redox mechanism involving the extrusion of excess sulfur. 55,60 In the present article, we have demonstrated that SnO 2 sulfurization can selectively produce SnS or SnS 2 phases over the same temperature range (300−400 °C) by using either TBT or TBDS as sulfurizing agents. Reactivity and thermal properties of these two organosulfur compounds should be taken into consideration to understand the origin of such selectivity.…”

Fabrication of a single-crystalline SnS-based piezo-assisted efficient single-electrode triboelectric nanogenerator for energy harvesting and sensing applications

“…41 The peak at 161.2 eV is responsible for 2p 3/2 present in SnS. 41 Thus, these results clearly indicate the formation of a pure single SnS phase through the LPE method.…”

“…2d) showed two prominent doublet spin–orbit peaks at 485.8 eV and 494.2 eV corresponding to Sn 2+ 3d 5/2 and Sn 2+ 3d 3/2 , respectively, which are recognized to the binding energy of Sn 2+ in the synthesized SnS. 41 The peak at 161.2 eV is responsible for 2p 3/2 present in SnS. 41 Thus, these results clearly indicate the formation of a pure single SnS phase through the LPE method.…”

An Anti‐Ambipolar Cryo‐Phototransistor

“…The photoresponsivity ( R λ = I ph /PS ) of a phototransistor is defined as the ratio of the generated photocurrent ( I ph = I light − I dark ) in response to the optical power density ( P ) impinging on the detector ( S : illuminated area). The wavelength‐dependent I ph showed two spectral spikes at 2.61 eV (475 nm) and 2.36 eV (525 nm) in line with the absorption peaks of n ‐MoSe 2 [ 34 ] and p ‐SnS, [ 35 ] respectively. The power‐dependent output curves of the anti‐ambipolar heterotransistor (Figure 6b) were also measured at V g = 40 V with a 532‐nm excitation laser of the power density from 40 µW cm −2 to 81.5 mW cm −2 .…”