Development of Ag/WO3/ITO thin film memristor using spray pyrolysis method

Dongale, Tukaram D.; Mohite, S.V.; Bagade, A.A.; Gaikwad, P. K.; Patil, P. S.; Kamat, Rajanish K.; Rajpure, K.Y.

doi:10.1007/s13391-015-4180-4

Cited by 46 publications

(25 citation statements)

References 26 publications

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“…The pinched hysteresis loop in I-V plane with exact crossing at origin results in an ideal memristor [36][37][38]. Furthermore, the coexistence of memristance and meminductance memory effects in the single device was experimentally demonstrated by the Qingjiang et al and proved that the shifting of I-V crossing location to the third quadrant leads to simultaneous memristive and meminductive memory effects in a single device [32].…”

Section: Resultsmentioning

confidence: 96%

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

et al. 2018

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In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO 2 /SS thin film metal-insulator-metal device. The voltage-induced resistive switching leads to clockwise and counterclockwise resistive switching effects. The present investigations confirm that the coexistence of both RS mechanisms is dependent on input voltage, charge-flux and time. Furthermore, the non-zero I-V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory effects are further confirmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during different voltage sweeps and sweep rates are responsible for the coexistence of filamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory effect in single Al/MnO 2 /SS metal-insulator-metal device. The coexistence of both RS effects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory effects is important for the development of adaptive and self-resonating devices and circuits.

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Section: Resultsmentioning

confidence: 96%

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

et al. 2018

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“…In the present investigation, different RRAM materials are analyzed such as ZnO, TiO2, WO3 and HfO2 owing to their fine memory performance [3][4][5]. The various physical parameters of above RRAM materials are listed in table 1.…”

Section: Resultsmentioning

confidence: 99%

“…The RRAM have several advantages over its other counterparts, for instance, high density of data storage, long data retention, low operating voltage, high endurance, fast switching speed and compatibility with conventional CMOS process and so on [1][2]. Generally, physical and chemical mechanism of RRAM is classified in terms of Valency Change Mechanism (VCM) [3][4][5], Electro-Chemical Metallization (ECM) [6], Thermo-Chemical Mechanism (TCM) [7], Phase Change Mechanism (PCM) [8], and Electrostatic/Electronic Mechanism (EEM) [9] etc. In above all mechanism the resistance of the RRAM switches between two resistance states viz.…”

Section: Introductionmentioning

confidence: 99%

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

Dongale¹,

Khot²,

Mohite³

et al. 2016

J. Nano- Electron. Phys.

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In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.

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“…For the present investigation, the drift velocity of oxygen vacancies is considered as a state variable 'w'. The details of conduction mechanism and device structure have been investigated thoroughly by many researchers [14,15,[20][21][22]. Considering the linear ionic drift with the average drift velocity of oxygen vacancies l V leads us to memristor current and voltage relation represented by the following mathematical equations [1]:…”

Section: Computational Detailsmentioning

confidence: 99%

“…Good switching ratio, long retention time, and good endurance have been observed in the developed memory device [12]. Against the backdrop of the international research scenario, our research group is also striving hard to model and realize memristor using different methods and come out with useful applications [13][14][15][16]. Previously we have reported the effect of device size as a function of frequency on memristor-based RRAM [17].…”

Section: Introductionmentioning

confidence: 99%

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

et al. 2017

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In this paper, we report the effect of the write voltage and frequency on memristor-based resistive random access memory (RRAM). The above-said parameters have been investigated on the linear drift model of the memristor. With a variation of write voltage from 0.2 to 1.2 V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz, the corresponding effects on memory window, low resistance state (LRS) and high resistance state (HRS) have been reported. Thus, the lifetime (s) reliability analysis of memristor-based RRAM is carried out using the above results. It is found that the HRS is independent of the write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase the fact that the memristor possesses higher memory window and lifetime (s) in the higher voltage with lower frequency region, which has been attributed to less data losses in the memory architecture.

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Development of Ag/WO3/ITO thin film memristor using spray pyrolysis method

Cited by 46 publications

References 26 publications

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

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