Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

Abstract

In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO 2 /SS thin film metal-insulator-metal device. The voltage-induced resistive switching leads to clockwise and counterclockwise resistive switching effects. The present investigations confirm that the coexistence of both RS mechanisms is dependent on input voltage, charge-flux and time. Furthermore, the non-zero I-V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory effects are further confirmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during different voltage sweeps and sweep rates are responsible for the coexistence of filamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory effect in single Al/MnO 2 /SS metal-insulator-metal device. The coexistence of both RS effects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory effects is important for the development of adaptive and self-resonating devices and circuits.

Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

“…Finally, increasing the scan rate to 5 V/s, the crossover points move completely into the third quadrant, and the curve also shows a second crossover point at around −2.5 V (Figure 9d) near to Vreset of Figure 6. This behavior is related to the simultaneous existence of a memristive and meminductive effect occurring within the nano-device, as also reported in [20,21,40]. The I-V curve for the ZnO-rGO device at different input voltage sweep rates (1.5, 2.5, 3.5, and 5 V/s) are summarized in Figure 9a-d, respectively.…”

“…This behavior is related to the simultaneous existence of a memristive and meminductive effect occurring within the nano-device, as also reported in [20,21,40].…”

“…The operating mechanism of the ZnO-rGO thin film memristive device is filamentary (i.e., the formation and breaking of conductive filaments (CFs) between TE and BE). The filamentary-based switching in ZnO devices has been reported previously in different works in the literature [40][41][42][43][44][45][46].…”

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

“…The RRAM device is a prospective solution for next‐generation nonvolatile memory applications owing to its compatibility with current CMOS technology; high speed of operation; and advantages in terms of footprint, low power consumption, and superior scalability properties. [ 70–73 ] RRAM devices can be integrated to form crossbar arrays. These arrays can have different configurations, such as 1S1R, unipolar one diode‐one resistor (1D1R), and bipolar 1S1R.…”

Tuning the conductance topology in solids

“…Their main signature is the pinched hysteresis loop in the current-voltage (I-V) response that have been segmented into two main classes [2]: Type I, if a self crossing is present or Type II, with no crossing. However, multiple crossings in the hysteretic memristive loops have been profusely reported in the literature [9][10][11][12] and they appeared already in the first descriptions of oxide conductance switching [13][14][15], way before the memristor concept was coined. Scrutinizing their microscopic nature is a challenging task, while understanding the driving mechanisms behind the memory response is a fundamental step for the ability of controlling and tuning them.…”