Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

Abstract

An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a synthesized ZnO–rGO as an active layer on fluorine-doped tin oxide (FTO)-coated glass substrate. Aluminum (Al) is deposited as a top metal contact on the ZnO–rGO active layer to complete the device. Photo annealing was used to reduce the GO to rGO to make the proposed method suitable for fabricating ZnO–rGO thin-film devices on flexible substrates. The electrical characterization of the Al–ZnO–rGO–FTO device confirms the coexistence of memristive and memimpedance characteristics. The coexistence of memory resistance and memory impedance in the same device could be valuable for developing novel programmable analog filters and self-resonating circuits and systems.

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

“…The rGO/ZnO hybridization greatly affects the V O interstitial effect found in the ZnO structure. The composite surface was found to possibly chemisorbed oxygen [222], thus generated quite several vacancy layer/pool that consequently enhances the crystalline of the film and device performance [214], [219], [222]- [224]. Moreover, Ahmed et al [226] demonstrates the optoelectronic characteristics of ZnO and GO contents using microwave techniques as depicted by Fig.…”

“…The insertion of the rGO was revealed to enhance the crystallinity and boost the device switching dynamics [215], [220], [221]. Cardarilli et al [222] demonstrates the diffraction patterns of ZnO with and without rGO as shown in Fig. 20.…”

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c.…”

“…It constitutes a substantial portion of the oxide precursor solutions: around 98% and 90% for lower and higher concentrations, respectively. The most common solvents in solution‐based metal oxide RRAMs are 2‐methoxyethanol (2‐ME), [ 63,72,79,80,98,102,104,105,107,109,112,113,115–119,121,127,129,130,133,134,137,139,142,144,150–153,158,159,168–185 ] ethanol, [ 72,77,78,82,103,108,113,114,120,126,132,135,136,138,145,147,157,162–164,168,186–200 ] deionized (DI) water, [ 73,101,116,120,123,148,162,163,190,201 ] acetic acid, [ 103,121,129–131,134,140,142,144,149,150,152,154,173,179,180,183,202 ] and isopropanol [ 23,123,125,128,136,169,181,203 ] among others (ethylene glycol, [ 141,204 ] 2‐butoxyethanol, [ 205 ] acetylacetone, [ 149 ] and acetonitrile […”

Amylum Resistive Random Access Memory Based on the Quantization Effect of Gold Nanoparticles

“…With the advent of the big data era, the in-depth analysis and processing of a large amount of data requires a higher calculation speed and efficiency, while traditional technology requires considerable time and power consumption to process data, which can no longer meet actual needs. , Therefore, it is very important to develop resistive variable memory that integrates computing and storage. − Resistive random access memory (RRAM) has the characteristics of simple structure and fast read-write speed . It can be used as a data storage unit and a logical computing unit , and is considered to be the basic device for the development of integrated excess technology.…”