Development of Al-based multilayer optics for EUV

Meltchakov, Evgueni; Hecquet, Christophe; Roulliay, Marc; Rossi, Sébastien de; Ménesguen, Y.; Adnot, Jérôme; Bridou, Françoise; Varnière, François; Ravet‐Krill, Marie‐Françoise; Delmotte, F.

doi:10.1007/s00339-009-5445-2

Cited by 67 publications

(32 citation statements)

References 35 publications

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“…To that purpose, we explore different ways as for instance the introduction of a third material within a bilayered structure and the effect of annealing. Multilayers made of more than two materials have already proven to be efficient optical systems [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Introduction of Zr in nanometric periodic Mg/Co multilayers

Guen

André

et al. 2010

Appl. Phys. A

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We study the introduction of a third material, namely Zr, within a nanometric periodic Mg/Co structure designed to work as optical component in the extreme UV (EUV) spectral range. Mg/Co, Mg/Zr/Co, Mg/Co/Zr and Mg/Zr/Co/Zr multilayers are designed, then characterized in terms of structural quality and optical performances through X-ray and EUV reflectometry measurements respectively. For the Mg/Co/Zr structure, the reflectance value is equal to 50% at 25.1 nm and 45° of grazing incidence and reaches 51.3% upon annealing at 200°C. Measured EUV reflectivity values of tri-layered systems are discussed in terms of material order within a period and compared to the predictions of the theoretical model of Larruquert. Possible applications are pointed out.

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Section: Introductionmentioning

confidence: 99%

Introduction of Zr in nanometric periodic Mg/Co multilayers

Guen

André

et al. 2010

Appl. Phys. A

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“…In previous research, it has been proven that Y/Al film stacks can degrade over time. 3 However, Zr/Al has been found to be stable over time, and considering a theoretical peak reflectivity of 78% may be a promising option, as shown in Figures 4 and 5. Our work continues as we study interfacial effects, materials lifetimes, thermal effects, stress behavior, and other issues.…”

Section: Optical Properties Of Multilayers In the Euv Regimementioning

confidence: 99%

Longer wavelength EUV lithography (LW-EUVL)

Maloney

Smith

2012

SPIE Proceedings

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Extreme UV Lithography (EUVL) is generally accepted as the leading candidate for next generation lithography. Several challenges remain for EUVL, especially as its insertion point is pushed to finer resolution. Although diffractive scaling may suggest a transition to shorter EUVL wavelengths, several issues arise that would make that difficult. Challenges involve issues such as flare, multilayer (ML) bandwidth, and reflector throughput which tend to worsen with decreasing wavelength. In this study, we have evaluated the tradeoff between flare scaling effects and diffractive scaling effects for EUVL, where flare induced image degradation is likely to dominate as sub-13.5 nm wavelengths are considered. With surface scatter effects scaling as 1/λ 2 , the idea of longer wavelength (LW-EUVL) becomes interesting. Since a working wavelength is driven by the selection of ML materials (which are molybdenum and silicon for 13.5 nm), the identification of suitable alternatives is an initial challenge. We have optimized aluminum and various refractory metals at 17.2 nm and present results. The optimized combination of aluminum with yttrium, zirconium, and other metals result in theoretical reflectivity values above 75%. We also describe possibilities for alternative LW-EUVL sources for 17.2 nm operation as well as the impact on resist absorption, especially through halogens of higher molar absorption (such as fluorine). The impact on mask absorber materials is also presented, which may also exhibit increased absorbance, leading to a lowering of film thickness requirements.

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“…Nous nous concentrerons sur EUI (Exteme Ultraviolet Imager, Figure 5, [17]) pour 01008-p. 5 Web of Conferences [18,19]). FSI utilise un concept novateur: celui des multicouches double-bande [20].…”

Section: Solar Orbiterunclassified

L'étude du Soleil et l'optique X/UV : 50 ans de succès

Auchère

Delmotte

2013

UVX 2012 - 11e Colloque Sur Les Sources Cohérentes Et Incohérentes UV, VUV Et X ; Applications Et Développements Récents

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Résumé. Depuis les premières expériences embarquées à bord de fusées sondes jusqu'aux satellites modernes d'aujourd'hui, la compréhension de la physique de notre étoile a beaucoup bénéficié des progrès de l'optique X/UV. En effet ce domaine permet de sonder les couches de l'atmosphère solaire où les processus de transfert d'énergie responsables des diverses formes d'activité ont lieu. Nous effectuons une brève revue de cet héritage, en nous concentrant sur l'apparition des optiques multicouches. Nous présentons ensuite les développements technologiques effectués actuellement pour les futurs instruments spatiaux d'observation du Soleil, et en particulier les couches minces EUV développées pour la mission Solar Orbiter de l'Agence Spatiale Européenne qui sera lancée en 2017.

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Development of Al-based multilayer optics for EUV

Cited by 67 publications

References 35 publications

Introduction of Zr in nanometric periodic Mg/Co multilayers

Introduction of Zr in nanometric periodic Mg/Co multilayers

Longer wavelength EUV lithography (LW-EUVL)

L'étude du Soleil et l'optique X/UV : 50 ans de succès

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