Development of backside illuminated silicon photomultipliers at the MPI semiconductor laboratory

Guenther, J.

doi:10.22323/1.051.0005

Cited by 5 publications

(5 citation statements)

References 4 publications

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“…Light in the near infrared range penetrates deeper into the nondepleted bulk, reducing the probability of reaching the depletion region due to the higher recombination (typical diffusion lengths are ≈10 μm) [34]- [36]. The responsivity increases with the bias voltage in the linear region of the reverse I -V characteristic [ Fig.…”

Section: Spectral Characterizationmentioning

confidence: 99%

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

Adamo

Agrò

Stivala

et al. 2013

IEEE Trans. Electron Devices

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We report on the electrical and optical characterization,\ud in continuous wave regime, of a novel class of silicon\ud photomultipliers fabricated in standard planar technology on a\ud silicon p-type substrate. Responsivity measurements, performed\ud with an incident optical power down to tenths of picowatts, at\ud different reverse bias voltages and on a broad (340–820 nm)\ud spectrum, will be shown and discussed. The device temperature\ud was monitored, allowing us to give a physical interpretation of the\ud measurements. The obtained results demonstrate that such novel\ud silicon photomultipliers are suitable as sensitive power meters\ud for low photon fluxes

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Section: Spectral Characterizationmentioning

confidence: 99%

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

Adamo

Agrò

Stivala

et al. 2013

IEEE Trans. Electron Devices

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“…The energy resolution, a property providing information on detector performance, was better than 23 % for both SiPM versions in the case of 18 F-FDG irradiation, but depended on cell size and the specific model. These results are in good agreement with other studies and show that SiPMs are already challenging APDs and their energy resolution of 15 % [27].…”

Section: Jinst 7 P08002 4 Conclusion and Future Workmentioning

confidence: 98%

“…This in turn causes the output pulse to have a lower amplitude than it should have if responding linearly. In the end, the SiPM appears to have a better energy resolution [4,18,19].…”

Section: Energy Resolutionmentioning

confidence: 99%

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Effects of temperature and bias voltage on the properties of a PET detector module based on the individual readout of 1 × 1 mm²LYSO crystals by monolithic arrays of SiPMs

et al. 2012

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The aim of this work was the development and evaluation of a detector based on SiPMs and fast scintillation crystals feasible for combined PET and MR imaging. Properties of two different 4 × 4 arrays of SiPMs by Hamamatsu -breakdown voltage, pulse height, energy resolution, dark counts and optical crosstalk -were investigated in terms of temperature and voltage dependence. Each channel in such an array consists of either 400 or 1600 cells and has a surface area of 1 × 1 mm 2 . For the alignment and coupling of individual scintillation crystals (1 × 1 × 20 mm 3 ) to these channels a special holder was designed. The breakdown voltages were at about 70 V for both models. Energy resolutions better than 23 % were observed. A temperature coefficient of the signal amplitude of (-2.7 ± 0.2) %/K and a voltage coefficient of (63 ± 2) %/V were determined for the model with 400 cells, whereas optical crosstalk was found to be an issue that needs further improvement. The dark count rate was below 1 MHz.

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“…Additionally, the dark rate of SiPM is relatively high because of thermally generated carriers and the leakage current of the P-N junction. [7] If the size of the detector is increased, the dark rate will accordingly be significant. To solve these shortcomings of SiPMs, the backside-illuminated avalanche drift detector (ADD) began to be studied for serving as a building block for SiPMs.…”

Section: Introductionmentioning

confidence: 99%

Preliminary results for the design, fabrication, and performance of a backside-illuminated avalanche drift detector

Ye¹,

Liang²,

Chen³

et al. 2013

Chinese Phys. B

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The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier (SiPM) has gradually become an alternative to the photomultiplier tube (PMT) in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency (PDE), good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector (ADD) was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.

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Development of backside illuminated silicon photomultipliers at the MPI semiconductor laboratory

Cited by 5 publications

References 4 publications

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

Effects of temperature and bias voltage on the properties of a PET detector module based on the individual readout of 1 × 1 mm²LYSO crystals by monolithic arrays of SiPMs

Preliminary results for the design, fabrication, and performance of a backside-illuminated avalanche drift detector

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Development of backside illuminated silicon photomultipliers at the MPI semiconductor laboratory

Cited by 5 publications

References 4 publications

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

Effects of temperature and bias voltage on the properties of a PET detector module based on the individual readout of 1 × 1 mm2LYSO crystals by monolithic arrays of SiPMs

Preliminary results for the design, fabrication, and performance of a backside-illuminated avalanche drift detector

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Effects of temperature and bias voltage on the properties of a PET detector module based on the individual readout of 1 × 1 mm²LYSO crystals by monolithic arrays of SiPMs