Development of CMOS-Compatible Low Temperature Cu Bonding Optimized by the Response Surface Methodology

Park, Haesung; Park, Manseok; Seo, Han Kyeol; Kim, Sarah Eunkyung

doi:10.1109/ectc32862.2020.00233

Cited by 4 publications

(3 citation statements)

References 19 publications

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“…Nanotwinned copper fabricated by electrodeposition is used to obtain <111>-oriented grains, (Hu et al, 2020). The XPS analysis of (b) copper nitride (Park et al, 2020a); (c) and the XPS analysis after the atmospheric environment was exposed (Park et al, 2020b). (d) the standard enthalpy of copper oxides and copper nitrides (Park et al, 2020a) for the benefit of ultrafast diffuse speed (Juang et al, 2018).…”

Section: Nanotwinned Cu and Metal Passivation Layermentioning

confidence: 99%

“…Metastable Cu x N y , which is more hydrophilic than bare Cu, was induced by Ar/N 2 plasma in their research. Park et al (2020b), Seo et al (2020), Park et al (2020a) and Seo et al (2019) researched Ar, N 2 and Ar-N 2 two-step plasma to bond Cu-Cu wafers and Cu/SiO 2 hybrid wafers. Remote mood plasma is applied.…”

Section: Wet Treatment and Plasma-assisted Bondingmentioning

confidence: 99%

“…Figure 5 (a) Schematic diagram of the daisy chain structure bonded by the PAB method(Hu et al, 2020). The XPS analysis of (b) copper nitride(Park et al, 2020a); (c) and the XPS analysis after the atmospheric environment was exposed(Park et al, 2020b). (d) the standard enthalpy of copper oxides and copper nitrides(Park et al, 2020a) …”

mentioning

confidence: 99%

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Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration

Kang

Niu

et al. 2022

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Purpose Bumpless Cu/SiO2 hybrid bonding, which this paper aims to, is a key technology of three-dimensional (3D) high-density integration to promote the integrated circuits industry’s continuous development, which achieves the stacks of chips vertically connected via through-silicon via. Surface-activated bonding (SAB) and thermal-compression bonding (TCB) are used, but both have some shortcomings. The SAB method is overdemanding in the bonding environment, and the TCB method requires a high temperature to remove copper oxide from surfaces, which increases the thermal budget and grossly damages the fine-pitch device. Design/methodology/approach In this review, methods to prevent and remove copper oxidation in the whole bonding process for a lower bonding temperature, such as wet treatment, plasma surface activation, nanotwinned copper and the metal passivation layer, are investigated. Findings The cooperative bonding method combining wet treatment and plasma activation shows outstanding technological superiority without the high cost and additional necessity of copper passivation in manufacture. Cu/SiO2 hybrid bonding has great potential to effectively enhance the integration density in future 3D packaging for artificial intelligence, the internet of things and other high-density chips. Originality/value To achieve heterogeneous bonding at a lower temperature, the SAB method, chemical treatment and the plasma-assisted bonding method (based on TCB) are used, and surface-enhanced measurements such as nanotwinned copper and the metal passivation layer are also applied to prevent surface copper oxide.

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Section: Nanotwinned Cu and Metal Passivation Layermentioning

confidence: 99%

Section: Wet Treatment and Plasma-assisted Bondingmentioning

confidence: 99%

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Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration

Kang

Niu

et al. 2022

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The efficient placement design for 3D Stacked Dies Packages

Yuan

Huang

2020

2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

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Comprehensive Analysis of a Cu Nitride Passivated Surface That Enhances Cu-to-Cu Bonding

Seo

Park

Kim

2020

IEEE Trans. Compon., Packag. Manufact. Technol.

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Development of CMOS-Compatible Low Temperature Cu Bonding Optimized by the Response Surface Methodology

Cited by 4 publications

References 19 publications

Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration

Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration

The efficient placement design for 3D Stacked Dies Packages

Comprehensive Analysis of a Cu Nitride Passivated Surface That Enhances Cu-to-Cu Bonding

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Development of CMOS-Compatible Low Temperature Cu Bonding Optimized by the Response Surface Methodology

Cited by 4 publications

References 19 publications

Recent progress on bumpless Cu/SiO2 hybrid bonding for 3D heterogeneous integration

Recent progress on bumpless Cu/SiO2 hybrid bonding for 3D heterogeneous integration

The efficient placement design for 3D Stacked Dies Packages

Comprehensive Analysis of a Cu Nitride Passivated Surface That Enhances Cu-to-Cu Bonding

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Product

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About

Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration

Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration