2011
DOI: 10.1016/j.solener.2011.03.017
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Development of CZTS thin films solar cells by pulsed laser deposition: Influence of pulse repetition rate

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Cited by 166 publications
(51 citation statements)
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“…According to previous SEM results, higher sulfurizing temperature would lead to phase purification and crystallinity improvement, which may probably contributed to the band gap reduction. In all, the band gap value in the range of 1.4-1.5 eV [25,30,33] matches well with solar spectrum and thus quite suitable for developing CZTS-based single junction solar cells.…”
Section: Band Gap Estimation From Uv-vis Absorption Spectrasupporting
confidence: 59%
“…According to previous SEM results, higher sulfurizing temperature would lead to phase purification and crystallinity improvement, which may probably contributed to the band gap reduction. In all, the band gap value in the range of 1.4-1.5 eV [25,30,33] matches well with solar spectrum and thus quite suitable for developing CZTS-based single junction solar cells.…”
Section: Band Gap Estimation From Uv-vis Absorption Spectrasupporting
confidence: 59%
“…Several methods have been used in the fabrication of CZTS thin film absorber layers, such as atomic beam sputtering [5], e-beam evaporation [6], thermal evaporation [7], magnetron sputtering [8][9][10][11], electrodeposition [12,13], spray pyrolysis deposition [14,15], pulsed laser deposition [16], etc. Most of these techniques were carried out using rigid substrates such as bilayer molybdenum (Mo) coated soda lime glass (SLG).…”
Section: Introductionmentioning
confidence: 99%
“…Up till now, numerous CZTS thin film preparation methods are reported, such as electrode position [4], pulse laser deposition [5], thermal deposition [6], spray pyrolysis [7], sol-gel spin coating [8], etc. Among these techniques, the sol-gel spin coating is most preferred for low-cost thin film preparation [9].…”
Section: Introductionmentioning
confidence: 99%