Development of eco-friendly thin film manufacturing process using poeroxo titanium complex solution and potential for resistive random access memory

Exploring the direction-dependency of conductive filament formation and oxygen vacancy migration behaviors in HfO2-based RRAM

“…The dawn of logic computing, 1 neuromorphic computing, [2][3][4] in-memory computing breaking through the conventional widespread ''memory wall'' problem of von Neuman architecture, 5 and big data analytics and storage 6,7 has led to increased competition for next-generation high-performance non-volatile memory. [8][9][10] As one of the most promising candidates, [11][12][13][14] HfO 2 -based resistive random access memory (RRAM) has attracted extensive attention due to its low power consumption, excellent scalability, controllable resistance states, large ON/OFF ratio (410 2 ), high-speed operation (o10 ns), and full compatibility with a complementary-metal-oxide-semiconductor (CMOS) for low-cost fabrication. [15][16][17][18][19] It is well known that HfO 2 is generally applied as a resistive layer between the upper and lower electrodes in RRAM.…”

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe2O3 Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

“…The conduction mechanisms of RRAM devices include Schottky emission, hopping conduction, ohmic conduction, Poole-Frenkel emission, space charge limited conduction (SCLC), and tunneling. [42][43][44][45][46][47][48][49][50][51][52][53][54] In our work, the linear I-V sweep curve of the Al/Ag-doped Fe 2 O 3−x /ITO device was converted into a log(V)-log (I) curve as presented in Fig. 6.…”