Development of ferroelectric RAM (FRAM) for mass production

Eshita, Takashi; Wang, Wensheng; Nakamura, Ko; Mihara, Satoru; Saito, Hitoshi; Hikosaka, Yukinobu; Inoue, Koji; Kawashima, Seiichiro; Yamaguchi, H.; Nomura, Kenji

doi:10.1109/isaf.2014.6922970

Cited by 9 publications

(4 citation statements)

References 3 publications

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“…Ramtron International Corporation presented the first commercial FRAM in 1988 [8]. FRAM is an advanced non-volatile memory that marketed earlier than its counterparts like MRAM, PCRAM, ReRAM [9].…”

Section: Fram/feram (Ferroelectric Ram)mentioning

confidence: 99%

A Survey of Hybrid Main Memory Architectures

Çavdar

Avcı²,

Koca

et al. 2019

Sakarya University Journal of Science

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Rapidly evolving technology, increased internet speed and capacity, and the widespread use of mobile technologies have increased the demands for faster applications and less power consumption of modern electronic systems. In modern electronic systems, RAM is as effective as CPU regarding performance and power consumption. Although DRAM is the most used types of main memory today, it has been insufficient in terms of provide increasing demands. One of the issues to be addressed is to improve DRAM in terms of performance and power consumption. Another study to address this increasing demand is the development of hybrid main memory architectures. Hybrid Main Memory is one of the most recent studies on RAM. In this research, we investigate hybrid main memory systems for a more efficient main memory architecture.

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Section: Fram/feram (Ferroelectric Ram)mentioning

confidence: 99%

A Survey of Hybrid Main Memory Architectures

Çavdar

Avcı²,

Koca

et al. 2019

Sakarya University Journal of Science

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“…FeRAM NVM based on lead zirconium titanate (PZT) -ferroelectric capacitor materials exhibit superior performance in flexible NVM in terms of low operation voltage (1.5 V), low cost per bit, and high switching speeds (~70 ns for the actual array) [24]- [26]. Ghoneim et al demonstrated the highest ever level of endurance (10 9 fatigue cycles for unbent and 10 10 for bent) before losing ~50% polarization for PZT base capacitor and stability of non-volatile charges (as a difference of switching and non-switching polarization) shown in Fig.…”

Section: B Memory Management Modulementioning

confidence: 99%

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

Shaikh

Ghoneim

Sevilla

et al. 2017

IEEE Trans. Electron Devices

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“…Rigid ferroelectric random access memories (FeRAM) have already made a great leap by their introduction to the market; hence, it is a relatively mature technology compared to other emerging NVM technologies. FeRAMs are commercially available in Texas Instruments' microprocessors and Fujitsu's RF tags [222][223][224]. The commonly used ferroelectric material in FeRAM is lead zirconium titanate (Pb1.1Zr0.48Ti0.52O3-PZT) due to its high switching speed [225,226], low cost per bit ($/bit), and low operation voltage [227,228].…”

Section: Flexible Ferammentioning

confidence: 99%

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2015

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Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

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Development of ferroelectric RAM (FRAM) for mass production

Cited by 9 publications

References 3 publications

A Survey of Hybrid Main Memory Architectures

A Survey of Hybrid Main Memory Architectures

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

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