Development of Field Emission Flat Panel Displays at Motorola

Talin, A. Alec; Chalamala, Babu; Coll, Bernard F.; Jaskie, J. E.; Petersen, Ryan; Dworsky, Lawrence N.

doi:10.1557/proc-509-21

Cited by 5 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Research on the application to field emission displays (FEDs) has become more extensive in recent years as a result of the attractive characteristics of field emission devices, such as improved viewing angle, small dimensions, simple fabrication and low power consumption. We are confident that FEDs will be a winning display solution in the market place [1]. Diamond and diamond-like carbon (DLC) films have attracted much attention as prospective field emission cold cathodes for microelectronics and flat panel displays (FPDs) due to their low or negative electron affinity (NEA), high thermal conductivity, outstanding physical and chemical inertness, etc [2,3].…”

Section: Introductionmentioning

confidence: 99%

Enhanced electron field emission properties of diamond-like carbon films using a titanium intermediate layer

Mao¹,

Zhao²,

Li³

et al. 1999

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Substantially improved uniformity and enhanced electron field emission properties of hydrogen-free diamond-like carbon (DLC) films were obtained using a titanium intermediate layer after the annealing process. Large emission current densities of 2.08 mA cm-2 at 14.3 V µm-1 and 7.20 mA cm-2 at 25.7 V µm-1 were achieved for DLC/Ti/Si film annealed at 430 °C for 0.5 h. Its field emission was much more uniform than that of as-prepared DLC/Ti/Si and DLC/Si films. Secondary ion mass spectroscopy (SIMS) showed that C has been amply diffused into the Ti layer. An x-ray photoelectron spectroscopy (XPS) spectrum of the annealed DLC/Ti/Si film after 10 min of argon ion sputtering showed the formation of TiC at the interface between the DLC and Ti/Si substrate. This interaction and interdiffusion of C and Ti could significantly lower the Schottky barrier height between the DLC and Ti/Si substrate. The result was that electrons induced from the Ti/Si substrate can be easily penetrated into DLC films, which enhances the field emission properties.

show abstract

Section: Introductionmentioning

confidence: 99%

Enhanced electron field emission properties of diamond-like carbon films using a titanium intermediate layer

Mao¹,

Zhao²,

Li³

et al. 1999

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In this case, to decrease the gate leakage current of drytype FEAs while the emission current increases, several processes with different etching steps have been used. 10,11 This work begins by considering that the etched shape of gate insulator can be one of the most important parameters for improving the emission stability of the FEAs. Based on this assumption, we carried out a new etching process for Mo-FEAs called a hybrid etching method to optimize the shape of the gate insulator.…”

mentioning

confidence: 99%

Effect of the Hybrid Etching Methods on the Field Emission Characteristics of Mo-Tip Field Emitter Arrays

Kim

Lee

et al. 2000

J. Electrochem. Soc.

View full text Add to dashboard Cite

Field emission display (FED) is a promising flat panel display (FPD), which provides a superior brightness, wide viewing angle, variety of colors, fast response time, and wide range of operating temperatures. Though some prototypes of FEDs are realized, 1,2 until now the success in its manufacturing depends on the fabrication technologies for uniform and stable field emitter arrays (FEAs), spacers with a high aspect ratio, and a low voltage phosphor.Most research on FEAs was focused on lowering the threshold voltage and increasing the emission current. 3,4 However, to improve the operating stability of FED, making FEAs with less gate leakage current is one of the most important issues. It is well known that the stability of FEAs depends on the geometrical shape both of the field emitter and the gate insulator. 5-9 Some simulation results 6 suggest that an emission current increases with the edge slope of the insulator, and the maximum electric field is obtained when the insulator edge lies at the same level with the gate edge. In the case that a vertical shape of gate insulator can be formed by dry etching, which has higher electric field on the tip apex and the gate insulator, so, the dry-type FEAs in which the insulator edge lies at the same level with the gate edge can have higher emission current and higher gate leakage currents. In this case, to decrease the gate leakage current of drytype FEAs while the emission current increases, several processes with different etching steps have been used. 10,11 This work begins by considering that the etched shape of gate insulator can be one of the most important parameters for improving the emission stability of the FEAs. Based on this assumption, we carried out a new etching process for Mo-FEAs called a hybrid etching method to optimize the shape of the gate insulator. Electron emission currents were measured for the two kinds of FEAs corresponding to each etching method and the electric field distribution on the tip apex and gate insulator were simulated for the two kinds of single triode using a simulation tool of SNU-FEAT 6 which is discussed.Experimental As a first step, the electric field on the apex of a tip and a gate insulator for an emitter were simulated by using an This program is based on finite element method (FEM) analysis, and includes the routines of automatic mesh generation and device analysis. Next, two kinds of Spindt-type Mo-tip FEAs were fabricated on a heavily doped n-type silicon wafer, FEAs with a drytype gate-insulator by dry etching, and FEAs with a hybrid-type gateinsulator by hybrid etching. The fabrication process for all FEAs in this work is fundamentally the same as that reported by Spindt et al. 12 Thermal oxide of 1.1 and 0.25 m thick sputtered Cr layers were deposited sequentially on heavily doped n-type Si wafer, and after the defining of 1.5 m diam holes by photolithography, the gate metal layer was etched by reactive ion etching (RIE) with a mixture of 50% O 2 and 50% Cl 2 at the rf power of 150 W. Then the gate insulator was op...

show abstract

Development of an evolved gas-time-of-flight mass spectrometer for the Volatile Analysis by Pyrolysis of Regolith (VAPoR) instrument

Getty

Kate

Feng

et al. 2010

International Journal of Mass Spectrometry

View full text Add to dashboard Cite

Development of Field Emission Flat Panel Displays at Motorola

Cited by 5 publications

References 0 publications

Enhanced electron field emission properties of diamond-like carbon films using a titanium intermediate layer

Enhanced electron field emission properties of diamond-like carbon films using a titanium intermediate layer

Effect of the Hybrid Etching Methods on the Field Emission Characteristics of Mo-Tip Field Emitter Arrays

Development of an evolved gas-time-of-flight mass spectrometer for the Volatile Analysis by Pyrolysis of Regolith (VAPoR) instrument

Contact Info

Product

Resources

About