Development of High Density Fan Out Wafer Level Package (HD FOWLP) with Multi-layer Fine Pitch RDL for Mobile Applications

Rao, Vempati Srinivasa; Chong, Chai Tai; Ho, David; Zhi, Ding Mian; Choong, Chong Ser; Ps, Sharon Lim; Ismael, Daniel; Liang, Ye Yong

doi:10.1109/ectc.2016.203

Cited by 98 publications

(6 citation statements)

References 9 publications

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“…The unique feature of the tall Cu pillar allowed for the design of AiP to satisfy the wide bandwidth characteristic, making it ideal for highly integrated 5G mm-Wave scenarios. In [21], TMV was created using wire bonding, which was evaluated for an ultra-thin package-on-package (PoP) application. The use of vertical Cu wire bonding was cost-effective, as it eliminates many process steps, such as a thick PR coating and Cu plating.…”

Section: Process Of Tmv-embedded Fowlpmentioning

confidence: 99%

“…This innovative approach eliminated the need for a laminate substrate and instead utilized Cu redistribution layers (RDLs) [20]. Among these aforementioned technologies, FOWLP emerged as an impressive candidate in AiP due to its low structure profile, compact size, and high I/O density [21]. FOWLP eliminated the need for traditional wire bonding or flip chip interconnects, enabling more direct and compact integration of the antenna and RF chip.…”

Section: Introductionmentioning

confidence: 99%

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Ultrathin Antenna-in-Package Based on TMV-Embedded FOWLP for 5G mm-Wave Applications

Yin,

Xia,

Liu

et al. 2024

Electronics

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In this paper, a novel through mold via (TMV)-embedded fan-out wafer-level package (FOWLP) technology was demonstrated to manufacture the well-designed Antenna in Package (AiP) with ultrathin thickness (0.04 λ0). Double-sided redistribution layers (RDLs) were employed to build the patch antenna, while a TMV interposer was used to connect the front and back RDLs. By optimizing the AiP’s parameters, the patch antenna can achieve a wide impedance bandwidth of 17.8% from 24.2 to 28.5 GHz, which can cover the 5G frequency bands. Compared with previous works, the proposed AiP has significant benefits in terms of its ultralow profile, easy processing, and high gain. Hence, the TMV-embedded FOWLP should be a promising technology for fifth generation (5G) millimeter wave (mm-Wave) applications.

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Section: Process Of Tmv-embedded Fowlpmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrathin Antenna-in-Package Based on TMV-Embedded FOWLP for 5G mm-Wave Applications

Yin,

Xia,

Liu

et al. 2024

Electronics

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“…For other chip-last or RDL-first potential applications, see Refs. [93][94][95][96][97][98][99][100][101][102][103].…”

Section: Chip-last or Rdl-first Processmentioning

confidence: 99%

Recent Advances and Trends in Fan-Out Wafer/Panel-Level Packaging

Lau

2019

Journal of Electronic Packaging

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The recent advances and trends in fan-out wafer/panel-level packaging (FOW/PLP) are presented in this study. Emphasis is placed on: (A) the package formations such as (a) chip first and die face-up, (b) chip first and die face-down, and (c) chip last or redistribution layer (RDL)-first; (B) the RDL fabrications such as (a) organic RDLs, (b) inorganic RDLs, (c) hybrid RDLs, and (d) laser direct imaging (LDI)/printed circuit board (PCB) Cu platting and etching RDLs; (C) warpage; (D) thermal performance; (E) the temporary wafer versus panel carriers; and (F) the reliability of packages on PCBs subjected to thermal cycling condition. Some opportunities for FOW/PLP will be presented.

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“…Meanwhile, Rao et al introduced the RDL-First Fan-Out Wafer Level Packaging (FOWLP) strategy. This innovative approach not only facilitates the scaling of redistribution layers (RDL) but also effectively addresses challenges associated with die shift, die protrusion, and warpage, overcoming issues found in traditional FOWLP methodologies [7].…”

Section: Introductionmentioning

confidence: 99%

A novel RDL structure of improving high-frequency transmission and reliability of FOWLP

Dai,

Zhu

2024

J. Phys.: Conf. Ser.

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In this paper, an effective structure RDL-GR is proposed to improve the electrical and reliability of the fan-out wafer package (FOWLP) with the addition of a graphene layer on the surface of the Redistribution Layer (RDL), including suppression and modulation of signal delay and crosstalk noise. A modified circuit model is formulated to evaluate the impact of RDL-GR on the transmission characteristics at high frequencies. Subsequently, the validity of the model is verified by utilizing the HFSS. Found on the circuit at high frequencies, the transmission characteristics of the RDL-GR compared to the traditional RDL structure (Tr-RDL) have better performance. At the same time, measurement by Vector Network Analyser (VNA) is carried out and results prove that the maximum error values of S11 and S21 are 1.81% and 1.47%, and make a strong case that S-parameters of RDL-GR for simulation using HFSS are reliable.

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Development of High Density Fan Out Wafer Level Package (HD FOWLP) with Multi-layer Fine Pitch RDL for Mobile Applications

Cited by 98 publications

References 9 publications

Ultrathin Antenna-in-Package Based on TMV-Embedded FOWLP for 5G mm-Wave Applications

Ultrathin Antenna-in-Package Based on TMV-Embedded FOWLP for 5G mm-Wave Applications

Recent Advances and Trends in Fan-Out Wafer/Panel-Level Packaging

A novel RDL structure of improving high-frequency transmission and reliability of FOWLP

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