Development of high lateral and wide angle resolved hard X-ray photoemission spectroscopy at BL47XU in SPring-8

Ikenaga, Eiji; Kobata, Masaaki; Matsuda, Hiroyuki; Sugiyama, Takeharu; Daimon, Hiroshi; Kobayashi, Keisuke

doi:10.1016/j.elspec.2013.04.004

Cited by 78 publications

(52 citation statements)

References 35 publications

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“…The HAXPES experiment with an excitation energy of 7.940 keV was performed at beamline BL47XU [31,32] of SPring-8. The energy distribution of the photoemitted electrons was analysed by using a hemispherical analyser (VG-Scienta R4000-12kV) with an overall energy resolution of 150 or 250 meV.…”

Section: Methodsmentioning

confidence: 99%

Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Ouardi¹,

Fecher²,

Kubota³

et al. 2015

J. Phys. D: Appl. Phys.

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Abstract.Using circularly polarised radiation and a combination of bulk-sensitive hard X-ray photoelectron spectroscopy and X-ray-absorption spectroscopy (XAS) we studied the electronic and magnetic structure of epitaxial Mn 1.8 Co 1.2 Ga thin films. Spin resolved Bloch spectral functions, density of states as well as charge and magnetisation densities were investigated by a first-principles analysis of full potential, fully relativistic Korringa-Kohn-Rostoker calculations of the electronic structure. The valence states were experimentally investigated by using linear dichroism in the angular distribution and comparing the results to spin-resolved densities of states. The linear dichroism in the valence band enabled a symmetry analysis of the contributing states. The spectra were in good agreement with the theoretical partial density of states. The element-specific, spin-resolved, unoccupied densities of states for Co and Mn were analysed by using XAS and X-ray magnetic circular dichroism (XMCD) at the L 3,2 edges. The spectra were influenced by strong correlation effects. XMCD was used to extract the site resolved magnetic moments. The experimental values of m Mn = 0.7 µ B and m Co = 1.05 µ B agree very well with the calculated magnetic moments. Magnetic circular dichroism in angle-resolved photoelectron spectroscopy at the Mn and Co 2p core level exhibited a pronounced magnetic dichroism and confirmed the localised character of the Mn d valence states.

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Section: Methodsmentioning

confidence: 99%

Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Ouardi¹,

Fecher²,

Kubota³

et al. 2015

J. Phys. D: Appl. Phys.

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“…30 nm) than conventional XPS, based on the analysis of the take-off angle dependence of the photoelectron spectra. [19][20][21] In the present work, we attempted to observe defect states by HAXPES to investigate the causes of the low activity of Fe 2 O 3 photoelectrodes.…”

Section: Introductionmentioning

confidence: 99%

Stoichiometric water splitting using a p-type Fe₂O₃based photocathode with the aid of a multi-heterojunction

et al. 2017

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“…HAXPES can efficiently probe burier layers 13 and interfaces 14 because of the large escape depth of high kinetic energy photoelectrons. The experiments using a photon energy of hν = 3.0 keV, with a total resolution of 400 meV, were carried out in the P09 beamline of DESY (Germany); and those using hν = 7.9 keV, with a total resolution of 250 meV, were carried out in the BL47-XU beamline of SPring-8 (Japan) 15 . Fig.…”

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Investigation of the Mn3−δGa/MgO interface for magnetic tunneling junctions

ViolBarbosa

Ouardi

Kubota

et al. 2014

Journal of Applied Physics

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The Mn 3 Ga Heusler compound and related alloys are the most promising materials for the realization of spintransfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn 1.63 Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn 1.63 Ga junction by hard x-ray photoelectron spectroscopy. The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn-Ga film strongly suppresses the oxidation of gallium.PACS numbers: 79.60. Jv, 79.60.Dp, 75.30.Gw, 75.70.AkThe engineering of a high performance magnetic tunneling junction (MTJ) is crucial for the emergence of a new class of non-volatile memories and spintronic devices. Directly related with these recent technologies, Mn 2 YZ Heusler compounds, where Y is a transition metal and Z is a main group element, have shown interesting properties such as high spin polarization, high Curie temperature (Tc), low net magnetic moment, and strong magneto-crystalline anisotropy 1 . Mn 3 Ga and related alloys appear as promising materials in the realization of switching type spin-transfertorque mangnetoresistive random access memories (STTMRAMs). Mn-Ga films present perpendicular magneto anisotropy (PMA) and a nearly compensated ferrimagnetic phase 2-6 . These characteristics are important for the reduction of the switching current and downscaling of the dimensions while maintaining thermal stability in STT-MRAM devices 7 . The full understanding and control of growth properties of the Mn-Ga/MgO system will open up avenues for the exploitation of Heusler compounds in ultra-high density memory technologies.The performance of MTJ devices is strongly influenced by the quality of the film interfaces. Long-range ordering of the two-dimensional interfaces is required for conservation of the electron moment transverse to the tunneling current propagation (k ).8 The integration of Heusler compounds in MTJs has been successfully demonstrated for Co 2 MnSi 9,10 . The great advantage of the Mn 2 YZ family over other Heuslers is the tetragonal distortion of the crystalline structure leading to the PMA. This allows an unique combination of high-spin polarization with perpendicular magnetization in MTJs. Recent studies on the engineering of MTJs using Mn-Ga alloys by Kubota et a) Electronic mail: carlos.barbosa@cpfs.mpg.de al. 4,11,12 resulted in the optimized layered structure: Cr buffer/Mn-Ga/MgO/CoFe. The MgO grows compressed on the Mn-Ga structure with a lattice mismatch of approximately 7%4 , which can cause lattice dislocations reducing the crystalline ordering. An insertion of a 4Å metallic Mg layer interfacing MgO and Mn-Ga promotes a slight increase of the ...

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Development of high lateral and wide angle resolved hard X-ray photoemission spectroscopy at BL47XU in SPring-8

Cited by 78 publications

References 35 publications

Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Stoichiometric water splitting using a p-type Fe₂O₃based photocathode with the aid of a multi-heterojunction

Investigation of the Mn3−δGa/MgO interface for magnetic tunneling junctions

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Development of high lateral and wide angle resolved hard X-ray photoemission spectroscopy at BL47XU in SPring-8

Cited by 78 publications

References 35 publications

Magnetic dichroism study on Mn1.8Co1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Magnetic dichroism study on Mn1.8Co1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Stoichiometric water splitting using a p-type Fe2O3based photocathode with the aid of a multi-heterojunction

Investigation of the Mn3−δGa/MgO interface for magnetic tunneling junctions

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Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Stoichiometric water splitting using a p-type Fe₂O₃based photocathode with the aid of a multi-heterojunction