Development of High Temperature Operation SiC Power Module

Abstract

ｄ NISSAN MOTOR CO., LTD.,JAPAN We have developed SiC power module which realizes operation at high temperature of 250 °C or higher. The withstand voltage of this power module is 1200 V, and two SiC-MOSFETs are built in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC-MOSFET during switching. Joining of the main parts in the module is done with eutectic solder with a solidus line of 350 °C or higher. It can operate in high temperatures up to 250 °C and ensures reliability at that temperature. We conducted 100 A switching test using this module. High speed switching was realized, and the turn-off switching time tf was about the same about 10 ns from room temperature to 250 °C. In this paper, we describe the design and performance of the developed power module.

High-speed switching operation for a SiC CMOS and power module

“…For high-frequency operation, it is important to reduce the switching time of main circuits. To realize high-speed switching of the main circuit, the gate capacitor of power devices should be quickly charged and discharged [12]; in other words, a high-outputcurrent gate buffer is required and then the inductance between the gate buffer and power metal-oxide semiconductor field-effect-transistor (MOSFET) should be low [13], and the inductance of the main circuit should be reduced to suppress current and voltage surges [14,15,16]. In this study, the main circuit inductance was reduced and a SiC complementary metal-oxide semiconductor (CMOS), which can be operated at high temperatures [17], and power SiC MOSFET were installed in the same module to shorten the gate wire.…”

“…Our study explores the further faster switching of main circuits by using a power module for high-speed drive and SiC CMOS gate buffer with large output current characteristics of several amperes during the Miller plateau. Modules for the high-speed switching of the SiC power MOSFET in the main circuit has been studied recently [14,15,16]. In previous studies [15,16], a Si gate driver was placed outside the module and then the inductance of the main circuit in the module was reduced to realize the highspeed switching.…”

“…Modules for the high-speed switching of the SiC power MOSFET in the main circuit has been studied recently [14,15,16]. In previous studies [15,16], a Si gate driver was placed outside the module and then the inductance of the main circuit in the module was reduced to realize the highspeed switching. Based on these studies [15,16], in addition to reducing the inductance of the gate wire, a way of reducing the inductance of the main circuit in the module using the developed SiC CMOS was explored.…”

“…In previous studies [15,16], a Si gate driver was placed outside the module and then the inductance of the main circuit in the module was reduced to realize the highspeed switching. Based on these studies [15,16], in addition to reducing the inductance of the gate wire, a way of reducing the inductance of the main circuit in the module using the developed SiC CMOS was explored. This study focuses on a high-speed switching operation of the SiC power MOSFET in the main circuit when using a low-inductance module for the high-speed drive and the SiC CMOS gate buffer.…”

“…In addition, we developed a module that can incorporates both this SiC CMOS gate buffer and the power MOSFET. In this module, the inductance of the main circuit in the module was reduced by connecting two substrates together and by incorporating a snubber circuit within the module [15,16]. We experimentally examined the switching speed of the main circuit in a double-pulse-test when using the developed module and SiC CMOS gate buffer.…”