Abstract.A new SiC power module package structure is proposed that is capable of withstanding greater ∆Tj cycle stress. Its most notable feature is the use of a SiN substrate having Cu/Invar/Cu foils (C/I/C thickness ratio of 1/8/1) brazed on both sides as conductor plates. The CIC foils show a very low coefficient of thermal expansion (CTE) of 5.1 ppm/°C and therefore can significantly reduce package degradation resulting from the larger CTE mismatch of the conductor to SiC and SiN. A thermal cycle test (TCT) was conducted between -40°C and 250°C (∆Tj = 290°C). It was found that the SiC/Au-Ge/CIC-SiN die attachment maintained joint strength of 78 MPa even after 3000 cycles.

This paper reports the results of a study on the reliability of aluminum wire for use with SiC devices operating at temperatures above 200 . In recent years, SiC-based power modules operating at such temperatures have been proposed for the purposes of miniaturization. However, this requires the complete reassessment of all packaging components under high-temperature conditions. We evaluated the reliability of aluminum wire during high-temperature exposure at 250 , thermal-cycle testing between -40 and 250 , and power-cycle testing with Tj = 165 . The results indicated that the wire meets the IEC607439-22 guidelines for pull strength and the industrial reliability requirements for power-cycle tests.

We developed a silicon carbide (SiC) power module that can switch large currents at high speed. The withstand voltage of this power module is 1200 V, and two SiC MOSFETs are built-in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC MOSFET for high-speed switching. In this study, switching at 270 A (a current density of 1000 A/cm 2 or more for the SiC MOSFET) was performed to evaluate this module. The turn-off switching time tf was ~10 ns, and the maximum dv/dt was 80 kV/us. Furthermore, this research examines the design and performance of the proposed power module.

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ｄ NISSAN MOTOR CO., LTD.,JAPAN We have developed SiC power module which realizes operation at high temperature of 250 °C or higher. The withstand voltage of this power module is 1200 V, and two SiC-MOSFETs are built in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC-MOSFET during switching. Joining of the main parts in the module is done with eutectic solder with a solidus line of 350 °C or higher. It can operate in high temperatures up to 250 °C and ensures reliability at that temperature. We conducted 100 A switching test using this module. High speed switching was realized, and the turn-off switching time tf was about the same about 10 ns from room temperature to 250 °C. In this paper, we describe the design and performance of the developed power module.