Development of indium tin oxide stack layer using oxygen and argon gas mixture for crystalline silicon heterojunction solar cells

Krajangsang, Taweewat; Thongpool, Voranuch; Piromjit, C.; Sriprapha, Kobsak

doi:10.1016/j.optmat.2020.109743

Cited by 7 publications

(3 citation statements)

References 29 publications

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“…To simplify optical simulations, a single antireflection coating (ARC) layer of ITO has been employed at the top interface with 10% reflection of incident light assumed to imitate the textured surfaces, as reported in the literature for solar cells with HIT designs. [74][75][76] All simulations have been performed under the standard condition of Air Mass 1.5 Global (AM 1.5 g) at a temperature of 300 K.…”

Section: Tcad Modelling Of the Proposed Devicementioning

confidence: 99%

“…For calibrating the tunnelling currents that are coupled with the solution of the current continuity equations, corresponding effective mass of charge carriers are defined in the oxide region as tabulated in Table 1. To simplify optical simulations, a single antireflection coating (ARC) layer of ITO has been employed at the top interface with 10% reflection of incident light assumed to imitate the textured surfaces, as reported in the literature for solar cells with HIT designs 74‐76 . All simulations have been performed under the standard condition of Air Mass 1.5 Global (AM 1.5 g) at a temperature of 300 K.…”

Section: Tcad Modelling Of the Proposed Devicementioning

confidence: 99%

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Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

et al. 2020

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Conventional silicon heterojunction solar cells employ defects-prone a-Si:H layers for junction formation and passivation purposes. Substituting these layers with hole-selective MoO x and electron-selective TiO x can reduce parasitic absorption and energy band offsets issues associated with doped silicon films. In this work, dopant-free asymmetric heterostructure Si solar cells are studied with and without SiO 2 passivation layer, and their performance has been compared. The inclusion of ultrathin SiO 2 insulator as a passivation layer promotes significant band bending that induces interface inversion of crystalline silicon as well as maintains the electric field required to tunnel charge carriers. The energy band diagram studies and variation of oxide thickness show that the IV characteristics of the solar cell critically depend on the insulator thickness; as the carriers tunnelling through the insulator becomes negligible at larger thicknesses. The simulated structure with MoO x as front holeselective contact and without any passivation exhibited conversion efficiency of 15.73%, which improved to 18.69% by incorporating passivated a-Si:H. However, by employing rear SiO 2 /TiO x stack with the front SiO 2 /MoO x , the device performance enhanced to open-circuit voltage of 785 mV, short-circuit current density of 41 mA/cm 2 , fill factor of 77%, and simulated conversion efficiency of 24.83%, which is~10% enhancement in the performance as compared to reference device employing traditional a-Si:H with dopant-free films. Novelty Statement For the first time, a dopant-free asymmetric silicon heterostructure solar cell (DASH) employing silicon oxide (SiO 2) as a passivation layer has been physically modelled using Silvaco TCAD. The dopant-free MoO x and TiO x as holeand electron-selective contacts have been incorporated. An ultrathin SiO 2 promotes band bending that induces interface inversion of absorber as well as facilitating carrier tunnelling. An efficiency of 24.83% has been numerically attained which is the best performance among DASH structures designed with oxide passivation. The 2-D cross-section view of the proposed device employing dopant-free layers and oxide passivated film is illustrated in Figure 1 for which we have applied memory intensive numerical method based on the computation of Poisson, charge transport and continuity equations in the Silvaco ATLAS

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Section: Tcad Modelling Of the Proposed Devicementioning

confidence: 99%

Section: Tcad Modelling Of the Proposed Devicementioning

confidence: 99%

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

et al. 2020

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“…Indium tin oxide (ITO) is an n-type semiconductor oxide [1,2]. In recent years, due to low resistivity combined with high transparency to visible light [3,4], ITO films have been widely used in various technological areas, including flat panel displays [5,6], solar cells [7,8], gas sensors [9,10] and organic light emitting diodes [11,12]. ITO thin films are usually prepared by magnetron sputtering [13], using ITO targets as raw materials.…”

Section: Introductionmentioning

confidence: 99%

Optimization Preparation of Indium Tin Oxide Nanoparticles via Microemulsion Method Using Orthogonal Experiment

Jiang¹,

Liu²,

Zhai³

et al. 2021

Crystals

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Indium tin oxide (ITO), an experimentally friendly transparent conducting oxide (TCO), has attracted great attention in the photoelectric field due to its intrinsically low resistivity and high transparency. In this work, the experimental conditions of preparing ITO nanoparticles using the microemulsion method were optimized by an orthogonal experiment. The optimal experimental conditions were obtained: mass ratio of the surfactant (AEO-3, MOA-5), a co-surfactant (n-propyl alcohol) of 5:3, molar ratio of indium and ammonia of 1:20, calcination temperature of 700 °C and calcination time of 4 h. Subsequently, the influence from process variables on the resistivity was researched systematically. The results demonstrated that the calcination temperature had a great effect on the resistivity; the resistivity reduced from 11.28 to 2.72 Ω·cm with the increase in the calcination temperature from 500 to 700 °C. Ultimately, ITO nanoparticles were prepared and systematically characterized under the optimal experimental conditions. The particles with a size of 60 nm were attributed to the cubic ITO crystal phase and showed low resistivity of 0.3675 Ω·cm. Significantly, ITO nanoparticles with low resistivity were obtained using the microemulsion method, which has potential application in the field of ITO nanoparticle preparation.

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Comparative study on IWO and ICO transparent conductive oxide films prepared by reactive plasma deposition for copper electroplated silicon heterojunction solar cell

Liu

Gong²,

Diao

et al. 2022

J Mater Sci: Mater Electron

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Development of indium tin oxide stack layer using oxygen and argon gas mixture for crystalline silicon heterojunction solar cells

Cited by 7 publications

References 29 publications

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

Optimization Preparation of Indium Tin Oxide Nanoparticles via Microemulsion Method Using Orthogonal Experiment

Comparative study on IWO and ICO transparent conductive oxide films prepared by reactive plasma deposition for copper electroplated silicon heterojunction solar cell

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Development of indium tin oxide stack layer using oxygen and argon gas mixture for crystalline silicon heterojunction solar cells

Cited by 7 publications

References 29 publications

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO 2 as passivation layer

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO 2 as passivation layer

Optimization Preparation of Indium Tin Oxide Nanoparticles via Microemulsion Method Using Orthogonal Experiment

Comparative study on IWO and ICO transparent conductive oxide films prepared by reactive plasma deposition for copper electroplated silicon heterojunction solar cell

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Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer