Development of integral passive components for multilayer organic MCMs at millimeter wave frequencies

Pham, Anh‐Vu; Krishnamurthy, V.; Bates, D.J.; Marcinkewicz, W.; Schmanski, B.; Saia, R.; Sprinceanu, L.

doi:10.1109/tadvp.2002.1017691

Cited by 11 publications

(3 citation statements)

References 4 publications

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“…Researchers used nongrounded loads with open [2] and radial [3] stubs along with branched [4], compensated [5], and ellipse-shaped [6] terminations. With known resistor characteristics at high frequencies, it is also possible to design an additional circuitry that cancels the parasitic effects and increases the highest operating frequency [7]- [9]. However, these approaches require an accurate model for the parasitics of the resistive elements and they do not compensate for the manufacturing variations in the value of the intrinsic resistor, limiting their usefulness.…”

Section: Introductionmentioning

confidence: 99%

Accurate and Process-Tolerant Resistive Load

Sütbaş

Özbay

Atalar

2020

IEEE Trans. Microwave Theory Techn.

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Resistive terminations cannot preserve high-quality matching at high frequencies due to the parasitic effects of the nonideal resistor. Moreover, resistance values of the termination resistors in integrated circuits are subject to process variations. Therefore, it is difficult to obtain accurate and process-tolerant terminations that are crucial for high performance in microwave circuits. We propose a new resistive network that compensates for the high-frequency parasitic effects of the resistors to improve the bandwidth of the termination. In addition to maintaining accuracy, the presented network provides tolerance to variation in the resistor values. The accuracy and tolerance of the proposed structure is analytically shown and experimentally verified by three test structures at the X-band fabricated on a GaN technology. The experimental results show that a small size and wideband 50-load with a return loss better than 25 dB can be obtained, while the resistor value changes ±30%.

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Section: Introductionmentioning

confidence: 99%

Accurate and Process-Tolerant Resistive Load

Sütbaş

Özbay

Atalar

2020

IEEE Trans. Microwave Theory Techn.

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“…Ta x N is already used as a diffusion barrier in copper interconnects on Si chips [1] and as compact thin-film resistors [2]. Also, it has been shown to hold promise as a barrier material in NbN-based Josephson junctions for use in superconducting digital circuits, when it is grown with a resistivity near the MIT [3,4].…”

Section: Introductionmentioning

confidence: 99%

Low-temperature transport properties of Ta_xN thin films (0.72 ⩽ x ⩽ 0.83)

Očko

Žonja

Nelson

et al. 2010

J. Phys. D: Appl. Phys.

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We report on low-temperature (4–320 K) transport properties of Ta x N thin films deposited on an amorphous SiO2 substrate. In this work, Ta x N thin films were restricted to a narrow range of x: 0.72 ⩽ x ⩽ 0.83 yet show considerable and nonmonotonic variation of their transport properties with Ta concentration. This behaviour is consistent with a local minimum in the density of electronic states at the Fermi level, as calculated for the rock salt intermetallic Ta4N5, and a rigid band model for describing the transport. The temperature dependence of the resistivity is best fit to the unusual form exp(−T/T 0). Interestingly enough, the fit parameter T 0 correlates well with the temperature of the maximum of the corresponding thermopower. Both of these characteristics, the fit and the correlation with the thermopower, are consistent with the Jonson–Mahan many-body formalism for charge and thermal transport when one has a nontrivial temperature dependence of the chemical potential. At the lowest temperatures measured, we have also found that the resistivity and thermopower show signatures of electron–electron interactions. We discuss also our results in the light of some theories usually used for describing transport of thin films and to other experimental investigations that have been performed on Ta x N.

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“…[1][2][3][4][5] It is typically used as dummy load or power-absorbent at the normally isolated ports of, such as, circulators as well as couplers to absorb the extra power caused by mismatches, imperfect directivity, or imbalances somewhere in these systems. By this way, the rear-end components or systems can be avoided from being burned or destroyed.…”

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confidence: 99%

Microwave power thin film resistors for high frequency and high power load applications

Jiang

Zhang

et al. 2010

Applied Physics Letters

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The authors report a power-dividing-based microwave power thin film resistor (MPTFR) that exhibits high operating frequency and high power load. The MPTFR is comprised of substrate, ground electrodes, two TaN resistive films, power dividing circuit and signal input port. The experimental results show that the voltage standing wave ratio of the MPTFR is lower than 1.6 in the band of 3.4–7.4 GHz and 8.2–9.8 GHz. The power load of the MPTFR is 200 W. The experimental data are in good agreement with the electromagnetic simulations.

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Development of integral passive components for multilayer organic MCMs at millimeter wave frequencies

Cited by 11 publications

References 4 publications

Accurate and Process-Tolerant Resistive Load

Accurate and Process-Tolerant Resistive Load

Low-temperature transport properties of Ta_xN thin films (0.72 ⩽ x ⩽ 0.83)

Microwave power thin film resistors for high frequency and high power load applications

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Development of integral passive components for multilayer organic MCMs at millimeter wave frequencies

Cited by 11 publications

References 4 publications

Accurate and Process-Tolerant Resistive Load

Accurate and Process-Tolerant Resistive Load

Low-temperature transport properties of TaxN thin films (0.72 ⩽ x ⩽ 0.83)

Microwave power thin film resistors for high frequency and high power load applications

Contact Info

Product

Resources

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Low-temperature transport properties of Ta_xN thin films (0.72 ⩽ x ⩽ 0.83)