Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology

Abstract

We present the fabrication and characterization of low-temperature ambipolar thin-film transistors (TFTs) based on hydrogenated amorphous silicon-germanium (a-SiGe:H) as active layer. Inverted staggered a-SiGe:H TFTs were fabricated on Corning glass. Spin-on glass silicon dioxide was used as gate dielectric to improve the quality of the dielectric-semiconductor interface. For positive gate bias the transfer characteristic showed n-type TFT behavior, while for negative gate bias p-type behavior was observed. The n-type region exhibits subthreshold slope of 0.45 V/decade while the p-type region shows a subthreshold slope of 0.49 V/decade.

Development of oxide thin-film transistor using all spin-on-glass insulators with addition of hydrogen peroxide: Buffer, gate insulator, and interlayer dielectric

“…We developed amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with all insulators by the SOG process, that is, SOG for the buffer layer, gate insulator, and interlayer dielectric. [24][25][26] SOG was diluted to improve the performance of the TFT, and the effect of the dilution was investigated. 27) In addition, the effect of an oxidizing agent added to the SOG was investigated.…”