Development of new 3D pixel sensors for phase 2 upgrades at LHC

Betta, Gian-Franco Dalla; Boscardin, M.; Mendicino, R.; Ronchin, S.; Sultan, D. M. S.; Zorzi, N.

doi:10.1109/nssmic.2015.7581946

Cited by 9 publications

(10 citation statements)

References 10 publications

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“…The results are in quite a good agreement with TCAD simulation predictions [5,16]. Taking as a benchmark the 2×10 16 n eq cm −2 fluence, for which data from all geometries are available, the signal efficiencies as a function of voltage are compared in figure 6b.…”

Section: Discussionsupporting

confidence: 75%

“…In view of the HL-LHC "Phase2" detector upgrades, a new generation of 3D pixel sensors has been developed in the past few years by the INFN-FBK collaboration [5]. Devices are fabricated using a single-sided technology on Si-Si Direct Wafer Bonded 6" substrates [6].…”

mentioning

confidence: 99%

“…TCAD simulations incorporating advanced radiation damage models [9] anticipate that charge trapping effects are strongly attenuated in these small-pitch 3D sensors, thus enabling for a good charge collection efficiency (CCE) even after very large irradiation fluences [5]. Moreover, due to the small values of the inter-electrode distance, the electric field intensities can reach values high enough to lead to impact ionization effects and charge multiplication, but also to risk of early breakdown.…”

mentioning

confidence: 99%

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Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 10¹⁶ n_eq cm⁻²

2019

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We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5×10 16 neq cm -2 . We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effects at high voltage. These results confirm the very high radiation tolerance of small-pitch 3D sensors well beyond the maximum fluences expected at the High Luminosity LHC.

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Section: Discussionsupporting

confidence: 75%

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confidence: 99%

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confidence: 99%

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Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 10¹⁶ n_eq cm⁻²

2019

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“…All the pixelated sensors are designed with slim edges [10]. Compared to the 200-µm design used for the ATLAS IBL pixels, the possibility to use a reduced pitch for the columns here allows for more aggressive designs, down to 75-µm size [11]. The periphery of the wafer layout hosts several smaller sensors (3D strips, 3D diodes) and test structures.…”

Section: Wafer Layoutmentioning

confidence: 99%

First production of new thin 3D sensors for HL-LHC at FBK

et al. 2017

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Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the "Phase 2" High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2×10 16 n eq .cm -2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50×50 or 25×100 µm 2 cell size), thinner active region (~100 µm), narrower columnar electrodes (~5µm diameter) with reduced inter-electrode spacing (~30 µm), and very slim edges (~100 µm). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6" substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GΩ even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

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“…Fabrication of 3D detectors on Si-Si bonded wafers (3D-SiSi) was first introduced by FBK [42]. These wafers offer the advantages of SOI wafers (mechanical resistance) without its drawbacks (KOH etching, anomalous stress behavior due to BOX).…”

Section: D-sisi Technology For High Luminosity Lhc (Hl-lhc)mentioning

confidence: 99%

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

et al. 2020

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This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.

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Development of new 3D pixel sensors for phase 2 upgrades at LHC

Cited by 9 publications

References 10 publications

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 10¹⁶ n_eq cm⁻²

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 10¹⁶ n_eq cm⁻²

First production of new thin 3D sensors for HL-LHC at FBK

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

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Development of new 3D pixel sensors for phase 2 upgrades at LHC

Cited by 9 publications

References 10 publications

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 1016 neq cm−2

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 1016 neq cm−2

First production of new thin 3D sensors for HL-LHC at FBK

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

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Product

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Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 10¹⁶ n_eq cm⁻²

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 10¹⁶ n_eq cm⁻²