Development of p-type Bi2−xSbxTe3 thermoelectric materials for power generation application exploiting synergetic effect of Sb alloying and repress process

Jang, Jeongin; Min, Bok Ki; Kim, Bong-Seo; Joo, Sung‐Jae; Lee, Ho Seong; Lee, Ji Eun

doi:10.1016/j.apsusc.2019.145236

Cited by 24 publications

(6 citation statements)

References 27 publications

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“…An even larger effect on the phonon transport in different crystallization directions is expected in p -Bi 2‑ x Sb x Te 3 and n -Bi 2 Te 3– x Se x alloys, which have a special practical interest in module construction. It should be mentioned that the reported ZT parameter for p -type Bi 2– x Sb x Te 3 significantly exceeds the TE performance of the n -type Bi 2 Te 3– x Se x counterpart. , Therefore, the optimization of the electrical and thermal transport of these n -type alloys is highly challenging and desired.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi₂Te_3–xSe_x Alloys

Parashchuk

Knura

Cherniushok

et al. 2022

ACS Appl. Mater. Interfaces

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Bi2Te3-based alloys are the main materials for the construction of low- and medium-temperature thermoelectric modules. In this work, the microstructure and thermoelectric properties of Cl-doped Bi2Te3–x Se x alloys were systematically investigated considering the high anisotropy inherent in these materials. The prepared samples have a highly oriented microstructure morphology, which results in very different thermal transport properties in two pressing directions. To accurately separate the lattice, electronic, and bipolar components of the thermal conductivity over the entire temperature range, we employed a two-band Kane model to the Cl-doped Bi2Te3–x Se x alloys. It was established that Cl atoms act as electron donors, which tune the carrier concentration and effectively suppress the minority carrier transport in Bi2Te3–x Se x alloys. The estimated value of the lattice thermal conductivity was found to be as low as 0.15 Wm–1 K–1 for Bi2Te3–x–y Se x Cl y with x = 0.6 and y = 0.015 at 673 K in parallel to the pressing direction, which is among the lowest values reported for crystalline materials. The large reduction of the lattice thermal conductivity in both pressing directions for the investigated Bi2Te3–x Se x alloys is connected with the different polarities of the Bi-(Te/Se)1 and Bi-(Te/Se)2 bonds, while the lone-pair (Te/Se) interactions are mainly responsible for the extremely low lattice thermal conductivity in the parallel direction. As a result of the enhanced power factor, suppressed bipolar conduction, and ultralow lattice thermal conductivity, a maximum ZT of 1.0 at 473 K has been received in the Bi2Te2.385Se0.6Cl0.015 sample.

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Section: Introductionmentioning

confidence: 99%

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi₂Te_3–xSe_x Alloys

Parashchuk

Knura

Cherniushok

et al. 2022

ACS Appl. Mater. Interfaces

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“…Among the TE materials, p-type Bi 2−x Sb x Te 3 14 and n-type Bi 2 Te 3−x Se x 15 have attracted much interest due to their excellent performance around room temperatures. However, n-type Bi 2 Te 3−x Se x generally exhibit worse thermoelectric performances than their p-type counterparts.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the optimization in the electrical and thermal transport of Bi 2 Te 3– x Se x is highly desired. To achieve this, various strategies have been used by the researchers. ,, In particular, nanostructuring has been demonstrated as an effective method to lessen thermal conductivity through phonon scattering and improve its Seebeck coefficient. ,, For instance, the incorporation of GaA nanoparticles in Bi 2 Te 2.7 Se 0.3 resulted in an enhancement in the Seebeck coefficients and a significant reduction in thermal conductivity, resulting in the enhancement of ZT values, while the incorporation of Y 2 O 3 in n-type Bi 2 Te 2.7 Se 0.3 resulted in a decrease in thermal conductivity and an improved Seebeck coefficient . Other studies have also demonstrated the efficiency of nanostructuring in improving TE performance by increasing the Seebeck coefficient and reducing the thermal conductivity. − …”

Section: Introductionmentioning

confidence: 99%

High Thermoelectric Performance in AgBiSe₂-Incorporated n-Type Bi₂Te_2.69Se_0.33Cl_0.03

Haruna

Luo

et al. 2022

ACS Appl. Mater. Interfaces

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Bismuth telluride-based (Bi2Te3) alloys have long been considered the best thermoelectric (TE) materials at room temperature. However, the n-type Bi2Te3 alloys always exhibit poor thermoelectric performance than their p-type counterpart, which severely limits the energy conversion efficiency of thermoelectric devices. Here, we demonstrate that incorporating AgBiSe2 can concurrently regulate the electrical and thermal transport properties as well as improve the mechanical performance of n-type Bi2Te2.69Se0.33Cl0.03 for high thermoelectric performance. Among these, AgBiSe2 effectively enhanced the Seebeck coefficients of n-type Bi2Te2.69Se0.33Cl0.03 due to the reduced carrier concentration and reduced the thermal conductivity of n-type Bi2Te2.69Se0.33Cl0.03 owing to the enhanced phonon scattering by AgBiSe2 as well as its low thermal conductivity nature. Consequently, the simultaneous optimization of electrical and thermal transport properties enables us to achieve a maximum ZT of ∼1.21 (at ∼353 K) and an average ZT ave of ∼1.07 (300–433 K) for 3.5 wt % AgBiSe2-incorporated Bi2Te2.69Se0.33Cl0.03, which are ∼25.62 and ∼23.36% larger than those of Bi2Te2.69Se0.33Cl0.03, respectively. This work proves that the incorporation of AgBiSe2 is an efficient way to improve the thermoelectric performance of bismuth telluride-based materials.

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“…S1a in the ESI†) and carrier concentration p . 31–34 This should result in effectively inhibited minority carrier transport, which strongly restricts the thermoelectric performance. In the case of the n -type Bi 2 Te 3 -based materials, an increase of the bandgap is possible through the alloying of Bi 2 Te 3 and Bi 2 Se 3 (Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Considering our previous investigations 30 and the Boltzmann theory-based calculations performed in this work, we have selected the following chemical compositions of the investigated samples: p 1 -Bi 0.48 Sb 1.52 Te 3 should increase both the bandgap E g (Fig. S1a in the ESI †) and carrier concentration p. [31][32][33][34] This should result in effectively inhibited minority carrier transport, which strongly restricts the thermoelectric performance. In the case of the n-type Bi 2 Te 3 -based materials, an increase of the bandgap is possible through the alloying of Bi 2 Te 3 and Bi 2 Se 3 (Fig.…”

Section: Methodsmentioning

confidence: 99%

Achieving high thermoelectric conversion efficiency in Bi₂Te₃-based stepwise legs through bandgap tuning and chemical potential engineering

Knura,

Maksymuk,

Parashchuk

et al. 2024

Dalton Trans.

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Development of p-type Bi2−xSbxTe3 thermoelectric materials for power generation application exploiting synergetic effect of Sb alloying and repress process

Cited by 24 publications

References 27 publications

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi₂Te_3–xSe_x Alloys

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi₂Te_3–xSe_x Alloys

High Thermoelectric Performance in AgBiSe₂-Incorporated n-Type Bi₂Te_2.69Se_0.33Cl_0.03

Achieving high thermoelectric conversion efficiency in Bi₂Te₃-based stepwise legs through bandgap tuning and chemical potential engineering

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Development of p-type Bi2−xSbxTe3 thermoelectric materials for power generation application exploiting synergetic effect of Sb alloying and repress process

Cited by 24 publications

References 27 publications

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi2Te3–xSex Alloys

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi2Te3–xSex Alloys

High Thermoelectric Performance in AgBiSe2-Incorporated n-Type Bi2Te2.69Se0.33Cl0.03

Achieving high thermoelectric conversion efficiency in Bi2Te3-based stepwise legs through bandgap tuning and chemical potential engineering

Contact Info

Product

Resources

About

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi₂Te_3–xSe_x Alloys

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi₂Te_3–xSe_x Alloys

High Thermoelectric Performance in AgBiSe₂-Incorporated n-Type Bi₂Te_2.69Se_0.33Cl_0.03

Achieving high thermoelectric conversion efficiency in Bi₂Te₃-based stepwise legs through bandgap tuning and chemical potential engineering