2004
DOI: 10.1016/j.sna.2003.11.022
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Development of piezoelectric micromachined ultrasonic transducers

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Cited by 225 publications
(124 citation statements)
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“…Flexural transducers share many traits with the more recently developed piezoelectric micromachined ultrasonic transducers (pMUTs) [28], which combine the enhanced fluid coupling of flextensional vibrations of a plate with micro electromechanical systems (MEMS) technology. In essence, a pMUT is an array of miniaturised flexural transducers operating in the fundamental bending mode.…”
Section: Introductionmentioning
confidence: 99%
“…Flexural transducers share many traits with the more recently developed piezoelectric micromachined ultrasonic transducers (pMUTs) [28], which combine the enhanced fluid coupling of flextensional vibrations of a plate with micro electromechanical systems (MEMS) technology. In essence, a pMUT is an array of miniaturised flexural transducers operating in the fundamental bending mode.…”
Section: Introductionmentioning
confidence: 99%
“…The 30-nm SrTiO 3 (STO) buffer-layer on the Si-substrate of the Epi(001) device was deposited by molecular beam evaporation (MBE). 21 The textured PZT films in the SG(001) devices were prepared by a sol-gel technique, where a PZT precursor solution was prepared from lead acetate (Pb[OAc] 2 · 3H 2 O), titanium iso-propoxide (Ti[i-OPr] 4 and zirconium n-propoxide (Zr[n-OPr] 4 in 2-methoxyethanol solvent. The 0.4 M PZT precursor with 10 mol.% excess lead content in solutions was prepared and spin coated on Pt/Ti/SiO 2 /Si wafers at 4000 rpm for 30 seconds, followed by pyrolysis at 400 C for 10 min.…”
Section: Methodsmentioning
confidence: 99%
“…In these cases, it is not practical to produce thick PZT films using standard sol-gel techniques, because of the increased cracking risk due to shrinkage nor is it desirable to produce thick films by a repetitive single layer deposition process due to the time required (Barrow et al, 1995;Zhou et al, 2000). The interest in ferroelectric lead zirconate titanate thick films for device applications, including high-frequency ferroelectric sonar transducers (Bernstein et al, 1997), microelectromechanical system devices (Polla & Schiller, 1995;Myers et al, 2003;(Akasheh et al, 2004), elastic surface wave devices (Cicco et al, 1996), hydrophones (Chan et al, 1999) and sensors (Xia et al, 2001), has increased in the last decades because PZT ferroelectric thick films possess the merits of both bulk and thin film materials (Barrow et al, 1997;Ledermann et al, 2003). PZT thick films devices not only work at low voltage and high frequency, as they are compatible with semiconductor integrated circuit, but also possess superior electric properties approaching near-bulk values.…”
Section: Introductionmentioning
confidence: 99%