Development of quantum device simulator NEMO-VN1

Abstract

Development of quantum device simulator NEMO-VN1To It has a collection of models that allow user to trade off between calculation speed and accuracy. NEMO-VN1 also includes a graphic user interface of Matlab that enables parameter entry, calculation control, intuitive display of calculation results, and in-situ data analysis methods.

Some physical results of single electron transitor

“…By utilizing the simulator namely NEMO-VN2 [19], the ID-VG characteristics of SET having the given parameters are shown in Fig. 3.…”

“…Here, we use a model of one-level (metallic) and multiplelevel (semiconducting) device for SET. We also summarize the theoretical approach based on NEGF, review the capabilities of the simulator, NEMO-VN2 [19], give examples of typical…”

Modeling of Carbon Nanotube Field Effect Transistors

“…These alternative electronic devices in the future include 1D structures (such as CNTs and compound semiconductor nanowires), RTDs, SET, molecular and spin devices, all of which are discussed in ref. [52].…”

“…These include MOSFET-specific quantum corrections and generic quantum corrections to the drift-diffusion, hydrodynamic, and Boltzmann transport equation models. Therefore, the semiconductor industry needs a new fully quantum-mechanically based TCAD (technology computer aided design) tool [52].…”

Simulation of Current-Voltage Characteristics of Spin Field Effect Transistor Using Nemo-Vn2

“…are the broadening functions, A 1,2 are partial spectral functions, A(E) are spectral function, G n is correlation function. We use a discrete lattice with N points spaced by lattice spacing 'a' to calculate the eigenenergies for electrons in the channel.By utilizing the simulator namely NEMO-VN2[14], the I D -V D characteristics of spin FET having the given parameters are shown infigure 5. Using "menu" of the main screen we can choose materials, temperature, gate thickness, gate length for simulation of I D -V D characteristics of spin FET.…”