Development of Radiation Hard Particle Detectors Made of Czochralski Grown Silicon

Härkönen, J.

doi:10.12693/aphyspola.124.372

Cited by 4 publications

(4 citation statements)

References 26 publications

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“…Since CZ silicon contains even more oxygen, and high-resistivity CZ substrates have recently become available, it is a promising substrate material for future HEP experiments since it has the potential for even higher radiation resistance. 15 In proton irradiated, oxygen-enriched n-type FZ silicon enhanced donor formation from 250 to 350 • C was explained by annealing of radiation induced defects with subsequent formation of C i -H-2O i -like complexes, which were proposed as the possible core for shallow , where the dashed curve shows the doping variations due to a n − layer close to the surface and a n + layer at the end-of-range, due to profile of vacancies and implanted hydrogen. (d) Example of final image produced with proton irradiation of n-type Si where the n − and n + doping regions are indicated, resulting in different porosities (see Fig.…”

Section: Ion Irradiation Induced Doping In N-type Siliconmentioning

confidence: 99%

“…Since CZ silicon contains even more oxygen, and high-resistivity CZ substrates have recently become available, it is a promising substrate material for future HEP experiments since it has the potential for even higher radiation resistance. 15 In proton irradiated, oxygen-enriched n-type FZ silicon enhanced donor formation from 250 to 350 • C was explained by annealing of radiation induced defects with subsequent formation of C i -H-2O i -like complexes, which were proposed as the possible core for shallow hydrogen donors. 9 Above 350 • C, the annealing characteristics are similar to those of helium implanted samples, probably by annealing of shallow hydrogen donors and hydrogen double donors and parallel formation of thermal donors.…”

Section: Ion Irradiation Induced Doping In N-type Siliconmentioning

confidence: 99%

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Depth-Resolved Imaging of Radiation-Induced Doping Changes in Silicon

Dang

Breese

2015

ECS J. Solid State Sci. Technol.

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We present a method for imaging variations in the doping depth profile in n-and p-type silicon induced by high energy ion irradiation. This doping microscopy method is based on electrochemical anodization of irradiated wafers, producing porous silicon with a local porosity depending on doping changes. In moderately-doped n-type silicon a higher porosity corresponds to where irradiation creates excess donors and a lower porosity corresponds to where acceptors are created. Higher porosity regions may be selectively removed and so observed in cross-section images. We compare the effects of proton and helium ion irradiation on the localized doping in n-type Czochralski silicon, with and without annealing at 300 • C. Even at such a low annealing temperature, a pronounced n + doping is observed for helium irradiation, highly confined to just the irradiated volume. In comparison, proton irradiation results in weaker n + doping which extends beyond the irradiated region, attributed to hydrogen diffusion.

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Section: Ion Irradiation Induced Doping In N-type Siliconmentioning

confidence: 99%

“…Since CZ silicon contains even more oxygen, and high-resistivity CZ substrates have recently become available, it is a promising substrate material for future HEP experiments since it has the potential for even higher radiation resistance. 15 In proton irradiated, oxygen-enriched n-type FZ silicon enhanced donor formation from 250 to 350 • C was explained by annealing of radiation induced defects with subsequent formation of C i -H-2O i -like complexes, which were proposed as the possible core for shallow hydrogen donors. 9 Above 350 • C, the annealing characteristics are similar to those of helium implanted samples, probably by annealing of shallow hydrogen donors and hydrogen double donors and parallel formation of thermal donors.…”

Section: Ion Irradiation Induced Doping In N-type Siliconmentioning

confidence: 99%

Depth-Resolved Imaging of Radiation-Induced Doping Changes in Silicon

Dang

Breese

2015

ECS J. Solid State Sci. Technol.

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“…with a surface barrier. For the studies presented here, we used a commercial Hamamatsu S5821 silicon PIN diode (1.2 mm 2 area) previously thoroughly tested at RBI, an Ortec D series transmission type surface-barrier detector (50 mm 2 area and 50 µm thickness) and a p-type FZ diode (25 mm 2 area) prepared at the Helsinki Institute of Physics (henceforth referred as HIP diodes) [37]. For the purpose of testing, the protective glass window was removed from the commercial PIN diodes.…”

Section: Jinst 8 P09003mentioning

confidence: 99%

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

et al. 2013

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Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

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“…An alternative way to achieve high oxygen concentration in the silicon bulk is to use the Czochralski silicon (Cz-Si) as a substrate material. Despite being a raw material for the microelectronic industry, Cz-Si wafers with high resistivity (≥1 kΩ cm) and well-controlled suitable oxygen concentration have recently been attained by applying a magnetic field in the crystal growth system (Härkönen et al, 2004;Härkönen, 2013). The magnetic field enables efficient control of the silicon melt flow oscillations, the rate of oxygen evaporation from the surface of the melt, and consequently, the oxygen concentration.…”

Section: Introductionmentioning

confidence: 99%

Performance Characterization of Dosimeters Based on Radiation-Hard Silicon Diodes in Gamma Radiation Processing

et al. 2022

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The dosimetric response of silicon diodes produced with distinct engineering technologies, Magnetic Czochralski (MCz), and standard Float Zone (Fz), has been investigated, aiming at their use for online dosimeters in gamma radiation processing applications. The p+-n-n+ junction diodes, 300 µm thick with an active area of 25 mm2, are operated as online radiation dosimeters in the short-circuit current mode. In this case, the key dosimetric quantity is the dose rate, which is correlated with the output current from the diode subjected to radiation. Thus, the dose is obtained offline by the integration of the corresponding current signal. The irradiations are performed with an industrial Gammacell 60Co facility at 2.3–2.44 kGy/h covering doses up to 275 kGy. Under continuous irradiation, both diodes delivered current signals whose intensities decreased with accumulated doses. Mitigation of this decay has been accomplished by pre-irradiating the devices to 700 kGy. Polynomial functions best represent the dose responses for either pristine or preirradiated diodes. The relevant dosimetric parameters as response stability, charge sensitivity, and repeatability of current signals (<5%) reveal the better performance of the MCz diode. It is important to note that the whole dataset fully complies with the international standard protocols for routine dosimeters in radiation processing dosimetry. Regarding radiation damage, which in unbiased diodes manifests primarily in the decay of current sensitivity, the results also showed greater tolerance of the MCz diode. Based on these studies, large availability, and better cost-effectiveness, it is possible to endorse the potential use of MCz devices as online routine dosimeters in radiation processing applications. However, the data reproducibility with the accumulated dose, the dose lifespan, and the effect of the irradiation conditions (e.g., temperature, relative humidity, and dose fractionating) remain to be investigated. Works in this direction are currently in progress.

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Development of Radiation Hard Particle Detectors Made of Czochralski Grown Silicon

Cited by 4 publications

References 26 publications

Depth-Resolved Imaging of Radiation-Induced Doping Changes in Silicon

Depth-Resolved Imaging of Radiation-Induced Doping Changes in Silicon

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Performance Characterization of Dosimeters Based on Radiation-Hard Silicon Diodes in Gamma Radiation Processing

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