2005
DOI: 10.1109/tasc.2005.847792
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Development of Single Solution Buffer Layers on Textured Ni Substrate for HTS Coated Conductors

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Cited by 15 publications
(7 citation statements)
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“…[3][4][5] However, the major goal now for CC technology to be competitive is to demonstrate the suitability of low-cost deposition techniques, such as chemical solution deposition (CSD) in which YBCO is grown by the trifluoroacetate route (TFA) 6,7 and buffer layers by metalorganic decomposition (MOD). [8][9][10] MOD-SrTiO 3 and MOD-CeO 2 have capitalized the attention of the researchers for its high potential as cap layers. Indeed, attractive J c values [$1 MA/cm 2 (77 K)] have been obtained using MOD-(Nb-doped) SrTiO 3 as single buffer layer on Ni-rollingassisted biaxially textured substrates (RABiTs), 11 MOD-CeO 2 on MOD-La 2 Zr 2 O 7 buffered Ni-RABITs, 12 or MOD-CeO 2 on ion-beam-assisted deposition (IBAD)stainless steel 13 ; however, they are far from the target value of 3-4 MA/cm 2 at 77 K. So far the great potential of CeO 2 on Ni-RABiT has been limited to medium lowcost approaches 10,[14][15][16] mostly because of the complexity to obtain highly textured MOD-CeO 2 under reducing atmosphere to match the criteria protection of the metallic substrate.…”
Section: Introductionmentioning
confidence: 99%
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“…[3][4][5] However, the major goal now for CC technology to be competitive is to demonstrate the suitability of low-cost deposition techniques, such as chemical solution deposition (CSD) in which YBCO is grown by the trifluoroacetate route (TFA) 6,7 and buffer layers by metalorganic decomposition (MOD). [8][9][10] MOD-SrTiO 3 and MOD-CeO 2 have capitalized the attention of the researchers for its high potential as cap layers. Indeed, attractive J c values [$1 MA/cm 2 (77 K)] have been obtained using MOD-(Nb-doped) SrTiO 3 as single buffer layer on Ni-rollingassisted biaxially textured substrates (RABiTs), 11 MOD-CeO 2 on MOD-La 2 Zr 2 O 7 buffered Ni-RABITs, 12 or MOD-CeO 2 on ion-beam-assisted deposition (IBAD)stainless steel 13 ; however, they are far from the target value of 3-4 MA/cm 2 at 77 K. So far the great potential of CeO 2 on Ni-RABiT has been limited to medium lowcost approaches 10,[14][15][16] mostly because of the complexity to obtain highly textured MOD-CeO 2 under reducing atmosphere to match the criteria protection of the metallic substrate.…”
Section: Introductionmentioning
confidence: 99%
“…[8][9][10] MOD-SrTiO 3 and MOD-CeO 2 have capitalized the attention of the researchers for its high potential as cap layers. Indeed, attractive J c values [$1 MA/cm 2 (77 K)] have been obtained using MOD-(Nb-doped) SrTiO 3 as single buffer layer on Ni-rollingassisted biaxially textured substrates (RABiTs), 11 MOD-CeO 2 on MOD-La 2 Zr 2 O 7 buffered Ni-RABITs, 12 or MOD-CeO 2 on ion-beam-assisted deposition (IBAD)stainless steel 13 ; however, they are far from the target value of 3-4 MA/cm 2 at 77 K. So far the great potential of CeO 2 on Ni-RABiT has been limited to medium lowcost approaches 10,[14][15][16] mostly because of the complexity to obtain highly textured MOD-CeO 2 under reducing atmosphere to match the criteria protection of the metallic substrate. Detailed studies on the growth mechanism and microstructure evolution of nanostructured MOD-CeO 2 on (001)YSZ single-crystal substrates revealed that under reducing atmospheres, carbon impurities from metal organic precursors decorate grain boundaries inhibiting the epitaxial grain growth.…”
Section: Introductionmentioning
confidence: 99%
“…Hence, buffer layers are absolutely necessary for coated conductor designs. Many buffer layers, including lanthanum zirconate (LZO) [2,3,4,5,6], cerium oxide (CeO 2 ) [7,8,9,10] and other lattice-matched buffer layers [11,12,13,14,15,16,17,18,19,20] which are prepared basically using solution-based methods have been used. These buffer layers should not only stop diffusion but also transfer the epitaxial texture of Ni-5% W substrate to the superconducting layer.…”
Section: Introductionmentioning
confidence: 99%
“…Owing to the high cost of multiple buffer layer depositions of LZO and CeO 2 , researchers have focused on preparing a single buffer layer with almost 0% lattice mismatch with YBCO and it was reported that the in-plane orientation of YBCO can be improved with these lattice matched buffer layers [11,12,13,14,15,16,17,18]. …”
Section: Introductionmentioning
confidence: 99%
“…It should be noted that this material is also used as a buffer layer in the IBAD approach for coated conductors [7][8][9]. Furthermore, GZO films prepared by chemical solution deposition [10][11][12] or electrodeposition [13] were tested in combination with CeO 2 , Y 2 O 3 or Gd 2 O 3 layers on Ni-W RABiTS tapes. Here, we studied the epitaxial growth of GZO buffers prepared by pulsed laser deposition, to check the suitability of GZO as single buffer layer on highly textured Ni-5% W tapes.…”
Section: Introductionmentioning
confidence: 99%