Development of single‐stage and doherty GaN‐based hybrid RF power amplifiers for quasi‐constant envelope and high peak to average power ratio wireless standards

Abstract

To have a broadband 180 phase differentiation, we added two sections of a RHTL and a LHTL to the lumped-element Wilkinson power divider as shown in Figure 2. The result is shown in Figure 6. For the same frequency range mentioned above, the insertion loss varies from À0.51 to À1.78 dB, whereas the minimum return loss at all ports and the isolation are below À10.2 dB. The output phase difference for the frequency range is just 69.5 only as shown in Figure 6(b), which agrees very well with the theory (Fig. 4). CONCLUSIONSIn this article, we present a compact and broadband balun made with lumped elements only. Unlike the previous works, we achieved both a small size and a broadband phase differentiation. Also, only this work is compatible with the modern integrated circuit design. The detailed theory suggested, and the measured results agree very well. The insertion loss and return loss can be better, if an optimized design is incorporated in the MMIC design. Also, the size can be further minimized in such a design. Applications exist in many microwave systems where a broadband and balanced signal generation is required.

Amplificadores De Potencia De Rf/Microondas Altamente Eficientes: Ejemplos De Diseño

“…It is a measure of the DC-to RF-power transformation PA capability. Thus, high efficiency means that the PA minimizes DC power wasting, leading to lower transmission cost and more compact structures (Gao et al, 2006, Moreno et al, 2012.…”

A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK Control

“…An example of this is the Universal Mobile Telecommunications System -UMTS, a Wideband Code Division Multiple Access -WCDMA standard application with PAPR ranging from 3 dB to more than 10 dB [1].…”

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

“…If low cost applications are targeted, other solutions are based on Si or sapphire substrates. Examples of working PAs based on GaN on Si devices can be found in [5], at L-band, and in [6] at W-band. GaN technology reliability has also improved significantly in the last few years.…”