Development of SPDT-structured RF MEMS switch

Uno, Yutaka; Narise, K.; Masuda, Takahiro; Inoue, K.; Adachi, Yoshitaka; Hosoya, Katsumi; Seki, T.; Satô, Fumihiko

doi:10.1109/sensor.2009.5285381

Cited by 33 publications

(10 citation statements)

References 3 publications

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“…The 1-D Euler-Bernoulli model for beam motion described in [11] was used to simulate the switch landing times and impact velocity at the first contact. Device parameters were extracted from the mechanical description of the optimized Omron MEMS switch described in [12] with the following additional assumptions: 1.) The gap between the contact points is 300 nm less than the gap between the biasing electrodes.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The mechanical quality factor is in the order of 20. While these assumptions cannot be directly verified (the Omron switch is hermetically sealed), they are neverheless reasonable based on the provided information [12]. The time from switch actuation to first impact was measured and averaged over the first 8 million cycles for each switch as shown in Fig.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Lifetime effects of drive voltage for a commercially-available ohmic-contact RF MEMS switch

Fruehling

Yang

Peroulis

2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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This work presents the first report on the influence of actuation voltage on high-voltage-switching lifetime with a population study of commercially-available ohmic contact RF MEMS switches manufactured by Omron. For switches actuated with a bias voltage of 15% less than Omron's specified operating point a greater than 6× increase in lifetime is observed for 75% of devices. This is despite the fact that a 15% reduced voltage increases the bouncing behavior of the switch. Simulated results suggest that it is likely more important that the 15% reduced voltage decreases the impact velocity and force by 24% and 42% respectively. While the increase in switch lifetime is significant, it comes with a penalty of increased dispersion in the achieved contact resistance (1-3.1 Ω versus 1-2.5 Ω) and increased settling time (48 μs versus 13 μs).

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Lifetime effects of drive voltage for a commercially-available ohmic-contact RF MEMS switch

Fruehling

Yang

Peroulis

2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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“…The anchor-free see-saw SPDT designed for S-Ku band is similar to ohmic SPDT except for the contact points that are capacitive in this case. The capacitive contacts have an advantage of high operating frequency as described in [9]. Selection of the switch parameters is made based on available fabrication technology and electromechanical response of the switch.…”

Section: Spdt Switch Descriptionmentioning

confidence: 99%

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Bansal

Bajpai

Kumar

et al. 2016

Journal of Electrical and Computer Engineering

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RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

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“…1 (b) shows the schematic of the RF-MEMS switch. The RF-MEMS switch (OMRON, 2SMES-01) [6] [7] is mounted on Layer-2 of the substrate. Two resistances of 100 k are also mounted on Layer-2 to discharge the drive voltage.…”

Section: Introductionmentioning

confidence: 99%

Orthogonal linear polarization switchable slot-ring array antenna using RF-MEMS switch

Ushijima

Nishiyama

Aikawa

et al. 2012

2012 Asia Pacific Microwave Conference Proceedings

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An orthogonal linear polarization switchable slot-ring array antenna using an RF-MEMS switch is newly proposed and its characteristics are experimentally investigated. The proposed array antenna consists of a dual-polarized slotring array antenna and an RF-MEMS switch (OMRON, 2SMES-01) which has high isolation and low insertion loss characteristics. This array antenna can accurately switch ±45deg. orthogonal linear polarizations due to the characteristics of the RF-MEMS switch. Two layers of Teflon glass fiber substrate with the relative dielectric constant r of 2.15 and the thickness of 0.8×2 mm is used. In the measurement, ±45-deg. linear polarization switching and excellent cross-polarization suppression are obtained. Thus, the RF-MEMS switch is suitable for polarization switchable array antennas. The array antenna using an RF-MEMS switch is very promising in a wide variety of wireless application areas, such as radar systems and various kinds of RF sensors.

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Development of SPDT-structured RF MEMS switch

Cited by 33 publications

References 3 publications

Lifetime effects of drive voltage for a commercially-available ohmic-contact RF MEMS switch

Lifetime effects of drive voltage for a commercially-available ohmic-contact RF MEMS switch

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Orthogonal linear polarization switchable slot-ring array antenna using RF-MEMS switch

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