Development of SPICE Compact Model of Neutron Displacement Effects in Lateral PNP Bipolar Transistor

Wang, Chenhui; Ding, Lili; Chen, Wei; Yang, Shanchao; Qi, Chao; Guo, Xiaoqiang

doi:10.1109/icreed.2018.8905085

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…With high neutron irradiation fluences (>10 14 n/cm 2 , 1 MeV equivalent), the accumulated trapping defect complexes will cause an increasing compensation of n-type dopants, which decreases the majority carrier concentration and mobility and consequently increases the series resistances in the n-type region, including the emitter and collector resistance for npn bipolar transistors [35]. The increased n-type resistance is also confirmed by reports [26], [36]. In addition, the high injection effect contributes to the decreased IC in the high-VBE region.…”

Section: Experimental Results and Analysismentioning

confidence: 59%

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Li¹,

Liu

et al. 2021

IEEE Access

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The degradation characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation were reported after multiple pulsed neutron-gamma irradiation at room temperature. The radiation-sensitive parameters of the test samples, including base current IB, collector current IC and DC current gain β, were measured and compared before and after every reactor n-γ pulse irradiation. The test results show that IB increased with increasing fluence, and IC slightly increased in the low base-emitter voltage VBE region (approximately from 0.4 V to 0.5 V) and decreased in the high-VBE region (approximately VBE>0.5 V). Moreover, the degradation degree of the test samples was different under different bias conditions. The performance of the test samples under cutoff bias mode displayed the most serious degradation, while those under forward bias mode suffered minimum damage. Meanwhile, the time-dependent annealing characteristics of the DC current gain for SiGe HBTs at various bias conditions were compared and analyzed.

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Section: Experimental Results and Analysismentioning

confidence: 59%