Development of sulphurized SnS thin film solar cells

Reddy, Vasudeva Reddy Minnam; Park, Chinho; Miles, Robert; Reddy, K.T. Ramakrishna

doi:10.1016/j.cap.2015.01.022

Cited by 166 publications

(20 citation statements)

References 84 publications

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“…Different materials are used as window layer including CdS [5,6], Cd(SSe) [7], and ZnS [8]. Researchers have suggested some more materials for solar cell application, such as MoBiInSe 5 [9], SnSb2S4 [10], and SnS [11]. Tin sulfide (SnS) and bismuth sulfide (Bi 2 S 3 ) are candidate materials for sustainable photovoltaic applications with band gaps of *1.3 and *1.7 eV, respectively, that bracket the ideal value of 1.5 eV.…”

Section: Introductionmentioning

confidence: 99%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Section: Introductionmentioning

confidence: 99%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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“…The best efficiency reported is 4.4% with Zinc Oxysulphide, Zn(O,S), acting as the n-layer [19]. Annealing [20] and/or sulphurization [21] of the SnS layer has also been suggested to improve the SnS solar cell's efficiency. However, directed fundamental characterization of SnS films especially on presistant photoconductivity is absent.…”

Section: Introductionmentioning

confidence: 99%

Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Gupta

Arun

2015

Physica Status Solidi (b)

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Tin Sulphide is a layered compound which retains its structure when deposited as thin films by thermal evaporation. The films were found to have oriented growth with the direction of orientation changing with film thickness. The film's morphology was found to change with orientation. The poor conductivity of the thicker samples made it difficult to make photocunductivity characterisation. However, unlike reported the thinner samples showed photo-sensitivity to be independent of film thickness and grain size with a high presistent photocurrent. With their absorption, photosensitivty, optimum band-gap and traps within the bandgap giving the charge carriers a longer life-time, thin samples of tin sulphide gives adequate scope designing efficient photovoltaics. The refractive index was modeled using Sellmeir's model, while most of the previous studies talk of Wemple-DiDomenico single oscillator model or Cauchy's dispersion relation. The Sellmeir's fitting parameters are reported which can be of use in ellipsometric studies.

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“…To date, a range of fabrication methods have been used for the preparation of semiconducting SnS films. 14 These include atomic layer deposition (ALD), 7 chemical vapour deposition (CVD), 5 , 15 thermal evaporation, 4 , 8 sputtering, 16 sulfurisation, 12 spray pyrolysis, 3 , 17 electrodeposition, 9 successive ionic layer adsorption and reaction (SILAR) 18 or chemical bath deposition (CBD). 19 – 21 However, these techniques are, to a large extent, either vacuum-based or involve slow deposition rates, which is not favourable for low-cost and large-scale production.…”

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confidence: 99%