Formation of porous SnS nanoplate networks from solution and their application in hybrid solar cells

Abstract

Herein, we present a facile solution-based route towards nanostructured, hybrid absorber layers based on tin mono-sulfide (SnS), an emerging, non-toxic absorber material for low-cost and large-scale PV applications.

Flexible and High‐Performance All‐2D Photodetector for Wearable Devices

“…Since SnS is an indirect bandgap semiconductor, its bandgap is quantificationally evaluated using Kubelka–Munk transformation by plotting ( αhv ) 1/2 versus hv , where α is absorption coefficient, h is Planck constant, and v is photon frequency. As shown in Figure f, bandgap of SnS is extracted to be 1.13 eV, which matches with previous reports …”

“…Therefore, it holds great potential to be well integrated into current industrial microelectronics. Second, it manifests rather high absorption coefficient beyond 2 × 10 4 cm −1 across the solar spectrum range, comparable with state‐of‐the‐art photodetecting materials . Third, it is low cost, earth abundant, and nontoxic, establishing solid foundation for its applications …”

Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

“…The layered nature of a-SnS has also been attributed to inconsistent growth rates and the uncontrolled formation of SnS lms with needle-, akeor plateletlike morphologies. 4,[11][12][13][14][15][16][17] This poses a signicant challenge for the fabrication of a-SnS thin lm devices, since the morphological implications can result in a high level of grain boundary defects, pin holes, cracks, and an increased interfacial surface area at the p-n junction. All of these features result in higher recombination rates, device shunting or diminished light absorption.…”

Revealing anisotropy and thickness dependence of Raman spectra for SnS flakes

“…Its large absorption coefficient ($10 5 cm À1 ), 9,10 as well as the predicted high carrier mobility, 7 renders it a great of potential applications in optoelectronic and electronic devices. 2,4,[11][12][13][14][15][16][17][18] Moreover, similar to the black phosphorous (BP) with puckered honey-comb crystal structure, SnS also possesses anisotropic electronic, 19,20 thermoelectric, [21][22][23] piezoelectric 24 and optical 25,26 properties. Given the strongly anisotropic properties of SnS, the SnS-SnS x Se 1Àx core-shell heterostructure with anisotropic photoresponse and the SnS-based photodetector with highly anisotropic performance of near-infrared have been achieved.…”