Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique

Onozawa, Yuichi; Takahashi, Kensuke; Nakano, Hiroki; Nemoto, M.; Otsuki, M.; Ikawa, O.; Miyasaka, Toru

doi:10.1109/ispsd.2008.4538902

Cited by 18 publications

(9 citation statements)

References 6 publications

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“…Though the FS layer can greatly improve the characteristics of the p-i-n diode, a very highly doped FS layer will cause large surge voltage and oscillation [4]. Therefore, the doping concentration in FS layer should be well defined to prevent the increment of oscillation voltage.…”

Section: Research Articlementioning

confidence: 99%

“…Nowadays, the softness of the p–i–n diode during reverse recovery transient is the main consideration in the power converter application. Many new design concepts have been proposed to obtain the soft diode commutation [1–5]. As one of the solutions, emitter controlled (EMCON) p–i–n diode provides excellent trade‐off between the forward voltage drop and the reverse recovery losses [6, 7].…”

Section: Introductionmentioning

confidence: 99%

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Physics‐based compact model for the EMCON p–i–n diode using MATLAB and Simulink

Xue

Zhang

2016

IET Power Electronics

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In this study, a physics-based model for emitter controlled (EMCON) p-in diode is proposed. The model is based on the one-dimensional Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The ADE is solved for all injection levels based on the design concepts of EMCON diode. The deep field stop layer utilised in the EMCON diode is also considered in the solution. Moreover, the depletion behaviour in the N-base during reverse recovery is redescribed. To be self-contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode are used to validate the proposed model. The simulation results are compared with experiment waveforms and good agreement is obtained.

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Section: Research Articlementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Physics‐based compact model for the EMCON p–i–n diode using MATLAB and Simulink

Xue

Zhang

2016

IET Power Electronics

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“…proton, helium) on the anode side has been developed to achieve soft reverse recovery characteristics that realize small di/dt and surge voltage. [14][15][16][17][18][19] In an extended abstract of SSDM 2021, 20) a local lifetime killer for FP-MOSFETs was investigated by the simulation to improve the Q rr -I DSS trade-off. In addition, surge voltage with the local lifetime killer was investigated in comparison with several conventional device structures.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Q _rr –I _DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side

Kobayashi¹,

Nishiwaki²,

Goryu³

et al. 2022

Jpn. J. Appl. Phys.

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Reducing the reverse recovery charge (Qrr) is effective for reducing switching loss in field plate (FP)-MOSFETs. A lifetime killer is utilized to reduce Qrr while increasing the leakage current in the off-state. Device simulation shows that a local lifetime killer on the cathode side successfully improves the trade-off between Qrr and IDSS in comparison with that of a uniform lifetime killer. A known issue of cathode lifetime killers is overshoot voltage by hard recovery. However, the overshoot voltage of FP-MOSFET decreases with a cathode lifetime killer owing to an internal snubber, which is a feature of FP-MOSFETs. An internal snubber with a large series resistance causes dynamic avalanche by both the increase of FP potential and excess carriers in high-speed operation. The cathode lifetime killer also improves dynamic avalanche by excess carriers. Consequently, the cathode lifetime killer is preferable for high-speed FP-MOSFETs.

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“…Therefore, they exhibit a trade-off relationship. 4,5) To minimize the total power loss, carrier lifetime control 2, [6][7][8][9][10] or carrier injection efficiency control [11][12][13][14][15][16][17][18] can be used to reduce Q r instead of increasing V f . In previous studies, these two approaches have been investigated individually.…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of forward voltage and reverse recovery charge of silicon p–i–n diodes

Yamashita

Machida

2015

Jpn. J. Appl. Phys.

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Silicon p-i-n diodes have attracted considerable attention for their use as many applications. In the light of reducing total power loss, the forward voltage V f and the reverse recovery charge Q r of silicon p-i-n power diodes are controlled by using two approaches based on control of either carrier lifetime or carrier injection efficiency. In this study, we investigate the effect of the two approaches on the relationship between V f and Q r for a Si p-i-n diode rated at 200 A/1200 V via theoretical analyses. The magnitude of V f for a given Q r value depends on rate of current density decreasing dj/dt. In the case of large values of dj/dt, carrier injection control can lead to decrease in V f and Q r to a greater extent. In contrast, at small values of dj/dt, carrier lifetime control can provide a greater decrease in V f and Q r .

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Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique

Cited by 18 publications

References 6 publications

Physics‐based compact model for the EMCON p–i–n diode using MATLAB and Simulink

Physics‐based compact model for the EMCON p–i–n diode using MATLAB and Simulink

Improvement of Q _rr –I _DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side

Theoretical analysis of forward voltage and reverse recovery charge of silicon p–i–n diodes

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Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique

Cited by 18 publications

References 6 publications

Physics‐based compact model for the EMCON p–i–n diode using MATLAB and Simulink

Physics‐based compact model for the EMCON p–i–n diode using MATLAB and Simulink

Improvement of Q rr –I DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side

Theoretical analysis of forward voltage and reverse recovery charge of silicon p–i–n diodes

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Product

Resources

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Improvement of Q _rr –I _DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side