Proceedings of the Power Conversion Conference-Osaka 2002 (Cat. No.02TH8579)
DOI: 10.1109/pcc.2002.998128
|View full text |Cite
|
Sign up to set email alerts
|

Development of the 2/sup nd/ generation SVCS using IEGT

Abstract: A new semiconductor power device, IEGT (Injection Enhanced Gate Transistor) has been developed by TOSHIBA Semiconductor Company. It is a metal oxide gate semiconductor device and offers advantages compared with the conventional GTO device, the smaller gate power and the higher turn-on and turn-off capability.A converter using the IEGT has been successfully developed. It will be used in static var compensator and so on. This paper describes the design, test results and advantages of the developed 21MVA static v… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 3 publications
0
1
0
Order By: Relevance
“…Similarly the IEGT offers advantages compared with the conventional GTO device, specifically lower gate power and higher turn-on and turn-off capability. These devices are now being applied commercially in MV static VAR compensators [5], and MV motor drives.…”
Section: History Of Active Power Devices In Industrial Applicationsmentioning
confidence: 99%
“…Similarly the IEGT offers advantages compared with the conventional GTO device, specifically lower gate power and higher turn-on and turn-off capability. These devices are now being applied commercially in MV static VAR compensators [5], and MV motor drives.…”
Section: History Of Active Power Devices In Industrial Applicationsmentioning
confidence: 99%