In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63⁰-83⁰. Si(100) substrates were exposed to 500 eV argon ions. Different surface morphology evolves with increasing angle of incidence. Parallel-mode ripples are observed up to 67⁰ which undergo a transition to perpendicular-mode ripples at 80⁰. However, this transition is not a sharp one but undergoes a series of unusual pattern formation at intermediate angles. Complete smoothening of silicon surface is observed at incident angles beyond 80⁰. The observed patterns are attributed to surface confined viscous flow and sputter erosion under ion bombardment.