Faceting mechanism in the sputtering process

Hauffe, W.

doi:10.1002/pssa.2210350246

Cited by 39 publications

(29 citation statements)

References 11 publications

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“…Such coarsening is different from previously reported coarsening with increasing sputtering time [7,9,12,[63][64][65]. Although some theoretical work has explained the coarsening based on numerical models [66,67], a model and simulation that can accurately predict the coarsening due to the impurity co-deposition remains unavailable at this time.…”

Section: Distance Dependence Of Smooth Si Morphology Treated By Obliqcontrasting

confidence: 57%

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO 2 ). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar + IBS with Al co-deposition was investigated on smooth SiO 2 , pre-rippled SiO 2 , and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO 2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO 2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO 2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO 2 , respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasiblazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlO x F y compounds originating mainly from the Al source.

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Section: Distance Dependence Of Smooth Si Morphology Treated By Obliqcontrasting

confidence: 57%

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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“…As time evolves, coarsening of these smaller relief structures starts [as shown in Fig. 2(e)] which is well described by Hauffe [21]. The elongated needle-like structures seen at 77.5⁰ can be attributed to shadowing effect which is expected to cause an increase in erosion of surface protrusions compared to depressions [5,17].…”

Section: Afm Images Shown In Figs 2(b)-(h)] At Different Incident Anmentioning

confidence: 58%

Unusual pattern formation on Si(100) due to low energy ion bombardment

Basu

Mohanty

Som

2012

Applied Surface Science

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In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63⁰-83⁰. Si(100) substrates were exposed to 500 eV argon ions. Different surface morphology evolves with increasing angle of incidence. Parallel-mode ripples are observed up to 67⁰ which undergo a transition to perpendicular-mode ripples at 80⁰. However, this transition is not a sharp one but undergoes a series of unusual pattern formation at intermediate angles. Complete smoothening of silicon surface is observed at incident angles beyond 80⁰. The observed patterns are attributed to surface confined viscous flow and sputter erosion under ion bombardment.

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“…We now go on to explain the coarsening behaviour of faceted structures (as is evident from Table 1) at higher fluences (>5 × 10 17 ions cm -2 ) using the mechanism proposed by Hauffe [32]. In this framework, the intensity of reflected ions impinging on an arbitrary area on a facet depends on the dimensions of the reflecting adjoining facets.…”

Section: Resultsmentioning

confidence: 95%

“…It is seen that for critical values of the amplitude-to-wavelength ratio, inter-peak shadowing of incident ion flux can lead to a transition from ripples to faceted structures. The coarsening behaviour of faceted structures with increasing fluence is explained in light of Hauffe’s mechanism based on reflection of primary ions [32]. Carter’s theory is also used to calculate fractional change in sputtering yield for ripples and faceted structures (where we have replaced the amplitude-to-wavelength ratio by amplitude-to-base width ratio for the latter ones) which is observed to follow a nearly similar trend as that of surface roughness as the evolution of the observed patterns takes place.…”

Section: Introductionmentioning

confidence: 99%

Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering

2013

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In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 1017 ions cm-2) which undergo a transition to faceted structures at a higher fluence of 5 × 1017 ions cm-2. Facet coarsening takes place at further higher fluences. This transition from ripples to faceted structures is attributed to the shadowing effect due to a height difference between peaks and valleys of the ripples. The observed facet coarsening is attributed to a mechanism based on reflection of primary ions from the facets. In addition, the role of sputtering is investigated (for both the angles) by computing the fractional change in sputtering yield and the evolution of surface roughness.PACS81.05.Cy, 81.16.Rf, 61.80.Jh, 87.64.Dz

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Faceting mechanism in the sputtering process

Cited by 39 publications

References 11 publications

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

Unusual pattern formation on Si(100) due to low energy ion bombardment

Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering

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