Development of thin-film solar cells using solar spectrum splitting technique

Kim, Sinae; Kasashima, Shunsuke; Sichanugrist, Porponth; Kobayashi, Taizo; Nakada, Tokio; Konagai, Makoto

doi:10.1016/j.solmat.2013.07.011

Cited by 33 publications

(18 citation statements)

References 19 publications

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“…Our group reported 2‐junction, 4‐terminal spectrum‐splitting solar cells consisting of hydrogenated amorphous silicon (a‐Si:H)‐based top cell and Cu(In,Ga)Se 2 (CIGS)‐based bottom cell with the spectrum splitting at a wavelength of 620 nm. This approach demonstrated a remarkable efficiency of 22%, which is much higher than the result of 15% produced by mechanically stacked one .…”

Section: Introductionmentioning

confidence: 77%

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

Kang

Takiguchi

Sichanugrist

et al. 2016

Progress in Photovoltaics

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In this work, we practically demonstrated spectrum-splitting approach for advances in efficiency of photovoltaic cells. Firstly, a-Si:H//c-Si 2-junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a-Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3-junction spectrum-splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c-Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3-junction spectrum-splitting approach can be a promising candidate for highly efficient photovoltaic technologies.

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Section: Introductionmentioning

confidence: 77%

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

Kang

Takiguchi

Sichanugrist

et al. 2016

Progress in Photovoltaics

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“…The conversion efficiency was improved from 8.92 to 9.60 % by the J sc gain of 1.0 mA/cm 2 without remarkable influence on the V oc or FF. The strong gain in short wavelength regions is highly beneficial for the top cell of spectrum splitting at 620 nm [3].…”

Section: Resultsmentioning

confidence: 99%

“…Multi-junction structures such as triple or quadruple junction thin film solar cells are recent representatives for better spectral utilization [1,2]. As a similar approach, we have been developing spectrum splitting solar cells consisted of amorphous silicon (a-Si:H) top cell and CuInGaSe 2 (CIGS) bottom cell which delivered the high efficiency of 22% after the splitting at a wavelength of 620 nm [3]. In order to enhance further the performance, boosting absorption in short wavelength regions is essential in case of the top cell.…”

Section: Introductionmentioning

confidence: 99%

Highly transparent Zn1−xMgxO/ITO multilayer for window of thin film solar cells

Kang

Chowdhury

Sichanugrist

et al. 2015

Current Applied Physics

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“…Conventional p‐type hydrogenated amorphous silicon (p‐a‐Si:H) has been widely used for the p‐type window layer, and various alloy materials and different phases have been developed to suppress parasitic absorption in the p‐a‐Si:H layer. For instance, amorphous silicon carbide (a‐SiC x :H) , microcrystalline silicon (μc‐Si:H) , and microcrystalline silicon oxide (μc‐SiO x :H) are representatives of the p‐type window layer of Si PV. Our group had reported the use of p‐type μc‐SiO x :H fabricated from gas‐mixtures of silane (SiH 4 ), carbon dioxide (CO 2 ), hydrogen (H 2 ), and diborane (B 2 H 6 ), as an emitter in HIT c‐Si solar cells .…”

Section: Introductionmentioning

confidence: 99%

Wide‐bandgap p‐type microcrystalline silicon oxycarbide using additional trimethylboron for silicon heterojunction solar cells

Kang

Sichanugrist²,

Zhang³

et al. 2017

Progress in Photovoltaics

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We report a new wide‐bandgap p‐type microcrystalline silicon oxycarbide (p‐μc‐SiOxCy:H) film prepared by plasma‐enhanced chemical vapor deposition. As an additional doping gas, trimethylboron was introduced into the standard processing gas‐mixture of silane, carbon dioxide, hydrogen, and diborane. With both trimethylboron and diborane as doping gases, the optical bandgap (E04) of the formed p‐μc‐SiOxCy:H film was 0.18 eV higher than that of reference microcrystalline silicon oxide (p‐μc‐SiOx:H) processed with only diborane doping gas for the same levels of film thickness and electrical conductivity. To demonstrate the effectiveness of the developed p‐layer, we applied it as an emitter in silicon heterojunction solar cells, which delivered a markedly high open circuit voltage of 0.702 V and a power conversion efficiency of 18.9% based on a non‐textured flat wafer. Copyright © 2017 John Wiley & Sons, Ltd.

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Development of thin-film solar cells using solar spectrum splitting technique

Cited by 33 publications

References 19 publications

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

Highly transparent Zn1−xMgxO/ITO multilayer for window of thin film solar cells

Wide‐bandgap p‐type microcrystalline silicon oxycarbide using additional trimethylboron for silicon heterojunction solar cells

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