Development of Transmission Grating for EUV Interference Lithography of 1X nm HP

Fukui, Tsubasa; Tanino, Hirohito; Fukuda, Yuki; Kuki, Masaki; Watanabe, Takeo; Kinoshita, Hiroo; Harada, Tetsuo

doi:10.2494/photopolymer.28.525

Cited by 8 publications

(4 citation statements)

References 8 publications

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“…In Japan, the EUV-IL exposure tool was developed at BL09b beamline at NewSUBARU synchrotron light facility, which was used for the EUV patterning tool to evaluate resist performance [6][7][8][9][10][11][12]. In this study, it is reported that the current results and status of this EUV-IL tool, especially the improvements in the exposure shot number increase by improving the grating holder design and exposure process automation by developing the specific software program.…”

Section: Introductionmentioning

confidence: 99%

Present Status of EUV Interference Lithography at NewSUBARU

Imai,

Yamakawa,

Harada

et al. 2023

J. Photopol. Sci. Technol.

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Since 2019, EUV lithography with a wavelength of 13.5 nm has been used for the mass production of 7 nm+ node semiconductor logic devices, and pattern processing of 16-nm-half pitch and below is also possible. According to IRDS, further miniaturization is still required by 2037. In EUVL, the most important issue is the development of resists with high sensitivity, high resolution, and low line-width roughness, simultaneously. At the NewSUBARU synchrotron light facility, the exposure tool on EUV interference lithography was developed to replicate EUV resist patterns, which can evaluate the resolution and line-width roughness performance. In this study, it is reported that the current results and status of this tool, especially on the improvement of the exposure shot numbers with a new grating holder and exposure-process automation by developing specific software program. As a result, the exposure shot numbers were improved to 48 shots, which were more than three times larger than those of the previous condition.

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Section: Introductionmentioning

confidence: 99%

Present Status of EUV Interference Lithography at NewSUBARU

Imai,

Yamakawa,

Harada

et al. 2023

J. Photopol. Sci. Technol.

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“…To achieve 10 nm fringe pattern generation, the 20-nm-L/S HSQ resist pattern for the diffraction grating was replicated by electron beam lithography. [12][13] However, it was very difficult to fabricate the 20-m-L/S pattern of TaN material due to the difficulty of etching such a fine pattern in the SiO 2 hard-mask process.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high-aspect-ratio transmission grating using DDR process for 10 nm EUV resist evaluation by EUV interference lithography

Yoshifuji

Niihara

Harada

et al. 2019

Jpn. J. Appl. Phys.

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We have developed an EUV interference lithographic exposure tool to evaluate a resist. The target patterning size of this system is 10 nm and below in half pitch. Transmission grating fabrication is a key technology in EUV interference lithography. To replicate a 10-nm-line-and-space (L/S) resist pattern on a wafer, a 20-nm-L/S pattern is required for the transmission grating. The pitch size of the interference fringes is half the size of the absorber pattern of the transmission grating. For the chemically amplified positive tone resist process, instead of alkali development, organic development can be adopted to convert to a negative-tone chemical amplification resist process, and pattern collapse can be suppressed. In addition to this process, a dry development rinse (DDR) process is used. The DDR process with dry development successfully prevents pattern collapse at a high aspect pattern because there is no surface tension in the dry development of the DDR process. The EUV diffraction efficiencies of the fabricated gratings were measured to be 14%, 11% and 4% for 40, 30 and 20-nm-L/S pattern grating, respectively. Using these gratings, 20, 15 and 10 nm resist pattern might be replicated on a resist. And the diffraction efficiency was sufficient for interferometric exposure using synchrotron radiation.

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“…In these study, TaN material was used as the grating absorber, which has good material for highdiffraction efficiency and nano-pattern replication property. In addition, we had reduced the vibration of the EUV-IL system [7], and fabricated grating pattern with 20-nm L/S pattern of HSQ resist material [8] to achieve 10-nm fringe pattern generation.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of High-Aspect-Ratio Transmission Grating Using DDR Process for 10-nm EUV Resist Evaluation by EUV Interference Lithography

Yoshifuji

Niihara

Harada

et al. 2018

J. Photopol. Sci. Technol.

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EUV lithography will be used as high volume manufacturing of semiconductor devices after 2020, where the half pitch of the devices is 10 nm. EUV interference lithography (EUV-IL) has been developed for the EUV resist evaluation with 10-nm and below patterning. The transmission grating is a key component for EUV-IL. The pitch size of the interference fringes are half size of the absorber pattern of the transmission grating. In this paper, diffraction grating pattern with 20nm line-and-space pattern with very high aspect of 90-nm carbon layer was fabricated using the dry development rinse (DDR) process with spin-on-carbon under-layer. The diffraction efficiency of the grating is expected to be 6%, which is enough for EUV-IL. In the DDR process, the DDR material replaced the exposed and developed part. The DDR process with dry development is to prevent pattern collapse perfectly because there is no surface tension at the dry development process. As the results, 20-nm L/S pattern with high-aspect-ratio of 5.9 was fabricated, which can be applied for the 10-nm EUV resist evaluation by EUV-IL.

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Development of Transmission Grating for EUV Interference Lithography of 1X nm HP

Cited by 8 publications

References 8 publications

Present Status of EUV Interference Lithography at NewSUBARU

Present Status of EUV Interference Lithography at NewSUBARU

Fabrication of high-aspect-ratio transmission grating using DDR process for 10 nm EUV resist evaluation by EUV interference lithography

Fabrication of High-Aspect-Ratio Transmission Grating Using DDR Process for 10-nm EUV Resist Evaluation by EUV Interference Lithography

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