Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

Influence of Oxygen Vacancies on the Frictional Properties of Nanocrystalline Zinc Oxide Thin Films in Ambient Conditions

“…Actually, the Raman peak position at 483 cm −1 for ZnO has been assigned to the disorder-induced surface phonon mode (2LA). 51,52 The peak intensity of this particular mode has been found to be weak in undoped ZnO and mildly increases with doping concentration due to the change of surface morphology or local polarizability induced by the dopants. 52 In addition, the intensity of this particular band (2LA) has also been related to the formation of hydroxyl group on the ZnO surface due to dissociatively absorbed water molecule on the defect sites.…”

“…51,52 The peak intensity of this particular mode has been found to be weak in undoped ZnO and mildly increases with doping concentration due to the change of surface morphology or local polarizability induced by the dopants. 52 In addition, the intensity of this particular band (2LA) has also been related to the formation of hydroxyl group on the ZnO surface due to dissociatively absorbed water molecule on the defect sites. 53 Thus, the enhanced intensity at 483 cm −1 observed in our experiment strongly suggests the occurrence of increased oxygen vacancies and water adsorption on the ZnO surface after UV illumination.…”

“…However, very interestingly, if we zoom in at the region between 415 and 500 cm –1 in Figure a, as depicted in Figure b, a clear increase of the peak intensity at 483 cm –1 can be observed on the UV-treated ZnO 550 as compared to that on the hydrophobic ZnO 550 surface. Actually, the Raman peak position at 483 cm –1 for ZnO has been assigned to the disorder-induced surface phonon mode (2LA). , The peak intensity of this particular mode has been found to be weak in undoped ZnO and mildly increases with doping concentration due to the change of surface morphology or local polarizability induced by the dopants . In addition, the intensity of this particular band (2LA) has also been related to the formation of hydroxyl group on the ZnO surface due to dissociatively absorbed water molecule on the defect sites .…”

High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

“…Indium-tin oxide (ITO), a heavily doped and highly degenerated n-type semiconductor with high carrier concentration (~10 21 cm −3 ) [ 4 , 5 , 6 ], is one of the most widely used transparent conductive oxides (TCO) due to unique combination of excellent electrical conductivity, optical transparency and good mechanical properties and relatively good chemical stability [ 7 , 8 , 9 ]. Although various new materials, such as tin dioxide (SnO 2 ) [ 10 ], zinc oxide (ZnO) [ 11 , 12 ], indium zinc oxide (IZO) [ 13 ], conductive nano-silver wire [ 14 ], have been applied in industry, ITO is still the main choice for conductive optical [ 15 ]. Its excellent photoelectric performance demonstrate potential in high efficiency optoelectronic devices including solar cells [ 16 ], touch screens [ 17 ], panel displays [ 17 ], organic light emitting diodes [ 18 ], electro-optic switches [ 19 ], liquid crystal devices (LCDs) [ 20 ], but also sensors for electronic skins [ 12 ] or thin film photovoltaics [ 21 ].…”

Electrical and optical properties of metal‐sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film

“…Various high-performance D/M/D multilayers used as transparent conductive film or electrodes have been successfully fabricated such as SnO 2 /M/SnO 2 [10][11][12], aluminum-doped zinc oxide (AZO)/ M/AZO [13], ZnO/M/ZnO [14][15][16][17]. As to the advantages of high transparency in visible wavelengths and excellent room-temperature luminescence performance, ZnO thin film has great potential in liquid-crystal display, ultraviolet (UV) detector and light-emitting diode [18,19]. Although the optical and electrical properties of ZnO thin film can be improved by adding or injecting onedimensional nanomaterials such as nanoparticles [20], nanowires [21,22] and nanorods [23], the complex preparation technology limits their applications.…”