Device Characteristics of Low-Threshold Quantum-Dot Lasers

Abstract

This paper addresses the issues associated with physics and technology of diode lasers based on self-organized quantum dots (QDs). Theoretically predicted advantages of a QD array as the active region of a semiconductor laser and basic principles of QD formation using self-organization phenomena are discussed. Special attention is paid to relationship between structural and electronic properties of QDs and laser characteristics. Recent achievements in controlling these parameters including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated.

Advances in Quantum-Dot Research and Technology: The Path to Application in Biology

“…47 Selected applications of quantum dots in electronics and optoelectronics depend on a detailed understanding of the properties of semiconductor quantum dots. [96][97][98] This situation is illustrated clearly by the case of InAs-based quantum dots where the recent realization of quantum-dot lasers 97 ' 98 provides an excellent example of quantum dots in complex optoelectronic devices. Boucaud et al 39 have observed far-infrared absorption in systems of two InAs quantum dots separated by a GaAs barrier; in these "InAs/GaAs quantum dot molecules", the electronic coupling between the dot states results in intraband absorption in the THz frequency range.…”

“…95 Many of the applications of quantum dots in electronics and optoelectronics depend on a detailed understanding of the properties of semiconductor quantum dots. [96][97][98] The recent realization of quantum-dot lasers 97 ' 98 provides an excellent example of quantum dots in complex optoelectronic devices.…”