Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing

Quantum dot lasers with controllable spectral and modal characteristics

“…Low light absorption in the passive section is achieved by means of the quantum well intermixing technique. As this step requires high-temperature treatment, which typically leads to pronounced blue shift of quantum dot luminescence [27,28], the applicability of the integrated mode filter concept to long-wavelength QD lasers seems to be questionable. Fortunately, QDs show much lower absorption as compared to a quantum well because of their lower DOS, so a further decrease in absorption for the filter section is not necessarily required.…”

Sub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers

“…The results are summarised in Table 1. An increase in J 0 is observed in the annealed devices compared with the AG device which is attributed to the reduction in the optical confinement factor as a result of Qdot size reduction, and to the weakly localised Qdot layers because of reduced conduction band offsets as a result of annealing (blue shift of lasing wavelength) [8]. In fact, T 0 is also found to reduce possibly because of the latter effect, thus promoting the thermal injection of carriers out of the Qdots.…”