Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs

Lee, J.W.; Mackenzie, Kenneth D.; Johnson, D.; Shul, R. J.; Pearton, S. J.; Abernathy, C. R.; Ren, F.

doi:10.1016/s0038-1101(98)00117-8

Cited by 8 publications

(4 citation statements)

References 33 publications

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“…3,4,8,9 The dc gain plots for the InGaP / GaAs HBTs ͑passivated and unpassivated transistors͒ are shown in Fig. Another problem of deposi-tions at higher pressures is the hydrogen incorporation at HBT emitter and base areas or substrates.…”

Section: Resultsmentioning

confidence: 99%

“…1 Although GaAs has excellent mobility characteristics, which translates into faster circuits, the poor surface quality has prevented its larger scale utilization, as opposed to Si. 3,4,8,9 In this work, we present a one-step passivation process by ECR-CVD deposition which requires no pretreatment ͑such as, H 2 and N 2 plasma surface pretreatment͒, 5,6 is fully compatible to monolithic microwave integrated circuits ͑MMICs͒, and does not require any changes in the lithographic process. 2 Usually, this problem is dealt with using the surface passivation through deposition of a thin nitride film.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Efficacy of ECR-CVD silicon nitride passivation in InGaP∕GaAs HBTs

Zoccal¹,

Diniz²,

Dói³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High quality passivation silicon nitride films have been obtained requiring no surface pretreatment and being fully compatible with monolithic microwave integrated circuits. The nitride film is deposited by electron cyclotron resonance—chemical vapor deposition directly over GaAs-n substrate and over InGaP∕GaAs heterojunction structures, which are used for heterojunction bipolar transistors (HBTs). Metal∕nitride∕GaAs-n capacitors were fabricated for all the samples. Effective charge densities of 3×1011cm−2 and leakage current densities of 1μA∕cm2 were determined. Plasma analysis showed a reduced formation of molecules such as NH in the gas phase at low pressures, allowing the deposition of higher quality films. The process was used for InGaP∕GaAs HBT fabrication with excellent results, such as higher current gain of passivated device comparing to unpassivated HBTs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Efficacy of ECR-CVD silicon nitride passivation in InGaP∕GaAs HBTs

Zoccal¹,

Diniz²,

Dói³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…For damage sensitive devices, such as the high electron mobility transistor (HEMT), it is essential to use a very low ion energy process because ion energy is a major factor causing ion damage to the device. 22 With HDPCVD, the ion energy can be reduced to minimize damage to the devices. The process pressures for PECVD and HDPCVD are quite different.…”

mentioning

confidence: 99%

Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition

Lee

Mackenzie

Johnson

et al. 2000

J. Electrochem. Soc.

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High‐density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low‐temperature processing over plasma‐enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors and magnetic heads. In this paper, the development of low temperature (<200°C) silicon nitride and silicon dioxide films utilizing ICP technology is discussed. The material properties of these films have been investigated as a function of ICP source power, radio‐frequency chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films are compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/normalAr and SiH4/NH3/normalHe , were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/normalAr . The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void‐free filling of high aspect ratio (3:1) sub‐micrometer trenches. © 2000 The Electrochemical Society. All rights reserved.

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“…where most of the hydrogen in the SiH 4 /NH 3 mixture originates from the ammonia [11]. Therefore, we designed deposition processes without ammonia.…”

Section: Methodsmentioning

confidence: 99%