2021
DOI: 10.1002/er.6542
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Device design for high‐efficiency monolithic two‐terminal, four‐terminal mechanically stacked, and four‐terminal optically coupled perovskite‐silicon tandem solar cells

Abstract: Summary A device based on perovskite and silicon tandem solar cells is considered as an interesting route to improve cell efficiency further the limit of single junction by keeping the reasonable cost of production. Here, we assess the device performances of CH3NH3PbI3 perovskite as top sub‐cells in tandem solar cells in association with traditional crystalline silicon heterojunction solar cells of various configurations such as monolithic two terminals, four terminals mechanically stacked, and four‐terminal o… Show more

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Cited by 20 publications
(13 citation statements)
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“…
electrical properties, mass productivity, scalability, and high flexibility. [7][8][9][10][11][12][13][14][15][16][17][18][19] Table 1 lists and compares the basic performances of our device with those of typical devices explored in the past decade. According to the current research results, OBDs with reset voltages less than 3 V can be erased freely, so they are often referred to flash memories; on the other hand, those with reset voltage higher than 3 V are regarded as excellent candidates for ROMs because the recorded information cannot be easily erased.
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mentioning
confidence: 99%
“…
electrical properties, mass productivity, scalability, and high flexibility. [7][8][9][10][11][12][13][14][15][16][17][18][19] Table 1 lists and compares the basic performances of our device with those of typical devices explored in the past decade. According to the current research results, OBDs with reset voltages less than 3 V can be erased freely, so they are often referred to flash memories; on the other hand, those with reset voltage higher than 3 V are regarded as excellent candidates for ROMs because the recorded information cannot be easily erased.
…”
mentioning
confidence: 99%
“…The impact of absorber thickness on the performance of the device is scrutinized by changing the thickness of mixed perovskite layer from 150 to 1000 nm, as displayed in Figure 2. It is noticed from Figure 2 that V oc decreases as the thickness increases, which could be ascribed to the increased rate of charge carrier recombination in the thicker absorber layer 56,57 and higher reverse saturation current. The reduced values of FF regarding thickness of mixed perovskite layer may be owing to the raised series resistance.…”
Section: Resultsmentioning
confidence: 96%
“…A truly covalent bond can only be formed between the same atomic species, an ionic bonding exists among alkaline elements and Halogens, Complex bonding, which plays a major role in ferroelectrics and relies on the interaction between empty shells. 74,75 The PSC crystal structure concerning the A, B, and X lattice sites is shown in Figure 5. The orbital composition, the conduction and valence band energies along with the stability of electron and holes in the perovskite material can be explained with the redox chemistry.…”
Section: Chemical Bonding In Perovskitementioning
confidence: 99%