Device Design, Simulation and Qualitative Analysis of GaAsP/ 6H-SiC/ GaN Metal Semiconductor Field Effect Transistor

Balaji, B.; Rao, K. Sambasiva; Aditya, M.; Sravani, K. Girija

doi:10.1007/s12633-022-01665-z

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…It possesses high bandgap of 3.49 (EV) with electron mobility of 900 (cm2 /vs), electron peak velocity is 2.7 x 10 7 (cm/s), 2DEG sheet electron density is 20 x 10 12 (cm -2 ), Critical breakdown field 3.3 (MV/cm), thermal conductivity > 1.7 (W/cm-K), Relative dielectric constant ( ) -9.0 GaN material possess high thermal conductivity, high saturation drift velocity. These properties are required for the device to work in high frequency for having high power switching and to work at high temperatures [28]. Hetero-junction is formed when two material of different band gaps with almost the same lattice constant.…”

Section: Structurementioning

confidence: 99%

Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application

Gowthami

Balaji

Rao

2023

IJE

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The impact of aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi Gate (FG) and Back Pi Gate(BG), Dual Floating material High K dielectric material such as Hafnium dioxide (HfO2), Aluminium Oxide (Al2O3), Silicon nitride (Si3N4) on Aluminium Galium Nitride/ Gallium Nitride (AlGaN/GaN), Heterojunction High Electron Mobility Transistor (HEMT) of 6nm technology is simulated and extracted the results using the Silvaco Atlas Technology Computer-Aided Design (TCAD) tool.The importance of High K dielectric materials like Al2O3 and Si3N4 were studied for the proposal of GaN HEMT. AlN, GaN Cap Layers, and High K Dielectric material are layered one on another to overcome the conventional transistor draw backs like surface defects, scattering of the electron, and less mobility of electron. Hot electron effect is overcome by Pi type gate.Triple tooth floating material is placed in the buffer layer to improve breakdown voltage. Therefore, by optimizing the HEMT structure the inabilities for certain devices are converted to abilities. The dependency on DC characteristics and RF characteristics due to GaN Cap Layers, Multi gate (FG &BG), and High K Dielectric material, Dual triple tooth material in buffer layer with recessd gate is established. Further Compared Single Gate (SG) Passivated HEMT, Double Gate (DG) Passivated HEMT, Double Gate Triple (DGT) Tooth Passivated HEMT, High K Dielectric Front Pi Gate (FG) and Back Pi Gate (BG), Asymmetric High K Dielectric Front Pi Gate (FG) and Back Pi Gate (BG) with recessed gate Nanowire HEMT. It was observed that the proposed resulted with increased Drain Current (Ion) of 7.5 (A/mm), low Leakage current (Ioff) 3E-15 (A), Transconductance (Gm) of 4.8 (S/mm), Drain Conductance (Gd) of 2.5 (S/mm), Maximum Oscillation frequency (Fmax) 745 GHz, Minimum Threshold Voltage (Vth) of -4.5V, On Resistance (Ron) of 0.12(Ohms) at Vgs =0V.

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Section: Structurementioning

confidence: 99%

Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application

Gowthami

Balaji

Rao

2023

IJE

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“…In subthreshold operation, the absence of dopants in the gate region minimizes off-state leakage, leading to improved power efficiency. The Id-Vds curve will handle higher output currents while maintaining low on-resistance [11,21].…”

Section: Drain Current Characteristicsmentioning

confidence: 99%

Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology

Krishnamurthy,

Venkatarami Reddy,

Radhamma

et al. 2023

IJE

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Device Design and Modeling of Fin Field Effect Transistor for Low Power Applications

Soma

Suresh

Balaji

et al. 2022

Lecture Notes in Networks and Systems

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Device Design, Simulation and Qualitative Analysis of GaAsP/ 6H-SiC/ GaN Metal Semiconductor Field Effect Transistor

Cited by 4 publications

References 19 publications

Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application

Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application

Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology

Device Design and Modeling of Fin Field Effect Transistor for Low Power Applications

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