Device modeling and simulation of the performance of Cu(In1−x,Gax)Se2 solar cells

Song, Jie; Li, Sheng S.; Huang, Che-Hsuan; Crisalle, O.D.; Anderson, Travis J.

doi:10.1016/s0038-1101(03)00289-2

Cited by 160 publications

(84 citation statements)

References 13 publications

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“…2b, inset. The experimental and simulation studies have shown that double grading in the CIGS absorber layer has greatly improved the performance of single-junction CIGS cells [40,41]. For detailed information on grading schemes and their benefits in device performance, the readers can refer the cited literatures [42][43][44].…”

Section: Cise/cigse Materials Properties and Device Structurementioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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Thin-film solar cell devices based on copper indium gallium diselenide (CIGSe) chalcogenide materials fabricated by vacuum-based deposition techniques have already achieved lab scale efficiency beyond 21%. For industrial-scale applications, non-vacuum deposition technique such as electrodeposition and screen printing is considered to be suitable approaches for reducing the device fabrication cost. Moreover, electrodeposition has the potential to prepare large area thin films as it requires cheap raw material sources and equipment capital. Hence, it is imperative to understand the current status and advancements in the electroplating techniques of the CIGSe thin films. This article reviews on the experimental advances in electroplating of ternary CuInSe 2 and quaternary CIGSe. Various approaches in electrodeposition, influential experimental parameters, and the deposition mechanisms which are related to the final cell efficiency are discussed in detail.

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Section: Cise/cigse Materials Properties and Device Structurementioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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“…We referred to model B of the results of Frisk et al [14]. We used a linear DGB structure of the CIGS layer with a ZnS buffer as [4][5][6], where the minimum bandgap of 1.1 eV is located at a depth of 0.25 μm in the CIGS from the interface of the ZnS buffer, and the maximum bandgap is 1.5 eV at a depth of 1.8 μm contacting the Mo layer as shown in Figure 1 …”

Section: Experiments and Simulationsmentioning

confidence: 99%

“…Gloeckler and Sites, and Song et al reported that the improvement in back grading in the CIGS solar cell could potentially increase the efficiency when the thickness of the absorber decreased [4][5][6]. In 2004 and 2010, Song et al reported various bandgap profiles in the CIGS layer and suggested an optimum bandgap structure, the double graded bandgap (DGB, bandgap gradings on both front and back sides of the CIGS absorption layer) profile using the AMPS-1D and DESSIS 2D simulators [5,6]; the front grading improved the open circuit voltage (V OC ) without reducing the short circuit current density (J SC ) and the back grading improved the V OC . Dullweber et al reported the effect of back grading on the CIGS layer, which suppressed the carrier recombination and resulted in an enhancement in the V OC by up to 0.09 V [7].…”

Section: Introductionmentioning

confidence: 99%

Numerical Optimization of Gradient Bandgap Structure for CIGS Solar Cell with ZnS Buffer Layer Using Technology Computer-Aided Design Simulation

Park

Shin

2018

Energies

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Abstract:The band structure characteristics of a copper indium gallium sulfur selenide (Cu(In 1-x Ga x )SeS, CIGS) solar cell incorporating a cadmium-free zinc sulfide (ZnS) buffer layer were investigated using technology computer-aided design simulations. Considering the optical/electrical properties that depend on the Ga content, we numerically demonstrated that the front gradient bandgap enhanced the electron movement over the band-offset of the ZnS interface barrier, and the back gradient bandgap generated a back side field, improving electron transport in the CIGS layer; in addition, the short circuit current density (J SC ) and open circuit voltage (V OC ) improved. The simulation demonstrated that the conversion efficiency of a double graded bandgap cell is higher than with uniform or normal/reverse gradient cells, and V OC strongly correlated with the average bandgap in the space charge region (SCR) of CIGS. After selecting V OC from the SCR, we optimized the band structure of the CIGS cell with a Cd-free ZnS buffer by evaluating J SC and the fill factor. We demonstrated that the cell efficiency of the fabricated cell was more than 15%, which agrees well with the simulated results. Our numerical method can be used to design high-conversion efficiency CIGS cells with a gradient band structure and Cd-free buffer layer.

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“…The density of defects at the interface CIGS/CdS was varied from 10 14 to 10 20 cm -2 . All these materials are well known materials and their properties can be easily found in the literature and experimental studies available in references [5][6][7].…”

Section: Cell Structure and Materials Parametersmentioning

confidence: 99%

“…There were several numerical studies for investigation of thin film solar cells and these reports investigate parameters of cells, which directly contribute in performance of thin film cell [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%