Numerical Optimization of Gradient Bandgap Structure for CIGS Solar Cell with ZnS Buffer Layer Using Technology Computer-Aided Design Simulation

Park, Joong−Hyun; Shin, Myunghun

doi:10.3390/en11071785

Cited by 12 publications

(7 citation statements)

References 20 publications

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“…The resulting current can be considered as the sum of the shortcircuit current Isc, originated from the photon absorption process. The current density is as follows [9]:…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD

Laoufi¹,

Benmoussa²,

Kadi³

et al. 2021

J. Nano- Electron. Phys.

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In this paper, we have simulated a copper indium gallium selenide (CIGS) thin-film solar cell using a physically based two-dimensional device simulator SILVACO Atlas. The simulation of electrical characteristics and quantum efficiency was under AM1.5 illumination and a temperature of 300 K. In this work, we changed the band gap of CuInxGa1 -xSe to optimize the efficiency of the solar cell. We obtained it by varying the absorber layer thickness with different mole fractions x that affects the efficiency of the solar cell. The simulation result shows that the maximum efficiency of 16.62 % was achieved with a band gap of 1.67 eV and a thickness of 3 µm, a short-circuit current density of 29.293 mA/cm 2 , an open-circuit voltage of 1.29 V, and a fill factor of 87.79 %. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications.

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“…The resulting current can be considered as the sum of the shortcircuit current Isc, originated from the photon absorption process. The current density is as follows [9]:…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD

Laoufi¹,

Benmoussa²,

Kadi³

et al. 2021

J. Nano- Electron. Phys.

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“…The temperature for all simulations is set at 300 K. The parameters presented in Table 1 are in the same range as those seen in the literature [11,12]. The values of the electron and hole mobilities (µe and µh, respectively) could be considered overestimated, although in the contributions presented previously [12,13], the values of the mobilities for both carrier types are even higher (µe = 100 and µh = 25 cm 2 /V•s). Figure 3 introduces a second model that is relevant for the scope of this work.…”

Section: Methodsmentioning

confidence: 99%

“…Numerical simulations can also be used to study new materials for CIGS devices. In reference [13], bandgap gradient optimization of CIGS devices with ZnS buffer layer was performed. The main result presented in reference [13] is how the bandgap gradient in CIGS affects the carrier transportation, and in turn the device performance.…”

Section: Introductionmentioning

confidence: 99%

A Deep Insight into the Electronic Properties of CIGS Modules with Monolithic Interconnects Based on 2D Simulations with TCAD

et al. 2019

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The aim of this work is to provide an insight into the impact of the P1 shunt on the performance of ZnO/CdS/Cu(In,Ga)Se2/Mo modules with monolithic interconnects. The P1 scribe is a pattern that separates the back contact of two adjacent cells and is filled with Cu(In,Ga)Se2 (CIGS). This scribe introduces a shunt that can affect significantly the behavior of the device, especially under weak light conditions. Based on 2D numerical simulations performed with TCAD, we postulate a mechanism that affects the current flow through the P1 shunt. This mechanism is similar to that of a junction field effect transistor device with a p-type channel, in which the current flow can be modulated by varying the thickness of the channel and the doping concentration. The results of these simulations suggest that expanding the space charge region (SCR) into P1 reduces the shunt conductance in this path significantly, thus decreasing the current flow through it. The presented simulations demonstrate that two fabrication parameters have a direct influence on the extension of the SCR, which are the thickness of the absorber layer and its acceptor concentration.

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“…Many research works have highlighted the positive influence of band gap profiling in CIGS structures on the generation and collection of minority carriers. − Lafuente-Sampietro et al studied the impact of double grading on the charge-carrier transport of a CIGS-based PV cell. It is shown that by a judicious choice of the notch position of the conduction band, the double grading allows benefiting from the advantages of both front grading and back grading. , An efficiency of 19.83% was recorded for a 2 μm thick absorber coat.…”

Section: Introductionmentioning

confidence: 99%

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

et al. 2023

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In this research article, we carry out investigation on compensating the efficiency loss in thin-film CIGS photovoltaic (PV) cell due to absorber coat depth reduction. We demonstrate that the efficiency loss is mainly caused by the disruption of the charge-carrier transport. We propose an architecture engineered with a stepped band gap profile for improving the efficiency of charge-carrier transport and collection. By modifying the gallium content, we tuned the band gap profile of the active layer of a reference experimental cell from which we previously collected all parameters. Using the simulator environment SCAPS-1D, we modeled a three-steps stacking profile of active layer with different gallium contents from one layer to another. Based on the results obtained, the band gap configuration herein proposed appears to be a prospective strategy for high-performance ultrathin Cu(In,Ga)Se2-based PV cell architecture engineering. By combining this approach with the optimization of the active layer doping, we enhanced the yields of the reference structure from 18.93% for a 2 μm active layer to 23.36% for only 0.5 μm thickness of active layer, that is, an enhancement of 4.4%. The fill factor increased from 73.24 to 81.73%, that is, an additional stability indicator value of 8.5%. The good values of the obtained efficiency and the improvement of the fill factor value are relevant indicators of a stable device. Active layer stacking combined with a stepped band gap profile and doping level optimization is definitely providing new perspectives in thin-film CIGS high-performance PV cell achievement.

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Numerical Optimization of Gradient Bandgap Structure for CIGS Solar Cell with ZnS Buffer Layer Using Technology Computer-Aided Design Simulation

Cited by 12 publications

References 20 publications

Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD

Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD

A Deep Insight into the Electronic Properties of CIGS Modules with Monolithic Interconnects Based on 2D Simulations with TCAD

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

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