2009 13th International Workshop on Computational Electronics 2009
DOI: 10.1109/iwce.2009.5091104
|View full text |Cite
|
Sign up to set email alerts
|

Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2011
2011
2015
2015

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 7 publications
0
2
0
Order By: Relevance
“…the antidot size increases, the transmission reduces even further. For the GAL(7,3), with 54 atoms removed, which is ∼ 20% of the total number, and for the GAL (7,5) in which 150 atoms are removed (∼ 50%), the transmission monotonically decreases.…”
Section: Computational Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…the antidot size increases, the transmission reduces even further. For the GAL(7,3), with 54 atoms removed, which is ∼ 20% of the total number, and for the GAL (7,5) in which 150 atoms are removed (∼ 50%), the transmission monotonically decreases.…”
Section: Computational Resultsmentioning
confidence: 99%
“…Graphene, a recently discovered form of carbon, has received significant attention over the last few years due to its excellent electrical [1][2][3][4][5], optical [6][7][8], and thermal properties [9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%