Device Scaling Considerations for Nanophotonic CMOS Global Interconnects

Manipatruni, Sasikanth; Lipson, Michal; Young, Ian A.

doi:10.1109/jstqe.2013.2239262

Cited by 38 publications

(21 citation statements)

References 59 publications

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“…However, decreasing the optical mode volume, V m , introduces adverse effects, for example, bending losses, and ohmic losses for polaritonic modes. It is therefore not straightforward to predict optoelectronic performance for device scaling into the nanoscale1314, and a rigorous analysis of fundamental scaling laws for nanophotonics as a function of critical device length is warranted. Here, we investigate the performances of four actively-controlled (electrically or optically) devices with respect to their scaling behavior: a light source, an electrical-to-optical (EO) data encoder typically in form of an electro-optic modulator, and a photodetector for the inverse OE conversion, along with a fourth device, which is a purely optical switch for all-optical information processing (Fig.…”

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confidence: 99%

Fundamental Scaling Laws in Nanophotonics

Liu

Sun

Majumdar

et al. 2016

Sci Rep

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The success of information technology has clearly demonstrated that miniaturization often leads to unprecedented performance, and unanticipated applications. This hypothesis of “smaller-is-better” has motivated optical engineers to build various nanophotonic devices, although an understanding leading to fundamental scaling behavior for this new class of devices is missing. Here we analyze scaling laws for optoelectronic devices operating at micro and nanometer length-scale. We show that optoelectronic device performance scales non-monotonically with device length due to the various device tradeoffs, and analyze how both optical and electrical constrains influence device power consumption and operating speed. Specifically, we investigate the direct influence of scaling on the performance of four classes of photonic devices, namely laser sources, electro-optic modulators, photodetectors, and all-optical switches based on three types of optical resonators; microring, Fabry-Perot cavity, and plasmonic metal nanoparticle. Results show that while microrings and Fabry-Perot cavities can outperform plasmonic cavities at larger length-scales, they stop working when the device length drops below 100 nanometers, due to insufficient functionality such as feedback (laser), index-modulation (modulator), absorption (detector) or field density (optical switch). Our results provide a detailed understanding of the limits of nanophotonics, towards establishing an opto-electronics roadmap, akin to the International Technology Roadmap for Semiconductors.

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mentioning

confidence: 99%

Fundamental Scaling Laws in Nanophotonics

Liu

Sun

Majumdar

et al. 2016

Sci Rep

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“…For the latter, using closed-form expressions for the mutual and ground capacitances [26] and the peak crosstalk voltage [24], we estimate a crosstalk coupling of −2 dB. In general, the figures of merit for interconnect performance are energyper-bit-per-length, bandwidth-per-pitch, and bandwidth-perarea [27]. Spintronic interconnects (spin wave and domain wall) can provide improvements in performance when compared with the CMOS interconnects in terms of energy-perbit-per-length [28].…”

Section: Discussionmentioning

confidence: 99%

Compact Physical Model for Crosstalk in Spin-Wave Interconnects

Dutta

Nikonov

Manipatruni

et al. 2015

IEEE Trans. Electron Devices

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We propose a formalism of a compact physical model for crosstalk noise analysis between two coplanar backward volume spin-wave interconnects. Comparing the amplitudes of the signal in the active line and the noise in the victim line, we introduce a figure of merit for crosstalk-the longitudinal or line-to-line coupling. It is shown that the crosstalk becomes prohibitively high as the edge-to-edge spacing between the lines goes down, and thus putting a limitation on the routing and placement in a spin-wave bus network. The position of the peak crosstalk noise coupling for different spacings and frequencies of excitation reveals a new limitation to the maximum interconnect length. Furthermore, the technique of superposition analogous to RLC interconnects is exploited to explain the complicated nature of crosstalk noise and develop a mechanism for modeling crosstalk. Finally, a compact physical model is derived using analytical expressions, which demonstrate a reasonably good agreement with the actual full micromagnetic simulation results.We consider two identical coplanar in-plane magnetized or the so-called backward volume spin-wave (BVSW) interconnects with a uniform lateral edge-to-edge spacing (S) between them, as shown in Fig. 1(i), with one line (left) to be the 0018-9383

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“…However, optical interconnects are considered as a good solution to remedy the problems faced by electric wires and can refashion the inter-chip data communications systems [2][3][4]. The quality of optical receivers in optical wireless communication systems (OWCS) greatly determines the total power consumption in these systems, where it is crucial to develop receivers' with faster and efficient response.…”

Section: In This Paper a New Junctionless Optical Controlled Field Ementioning

confidence: 99%

Numerical Investigation of A New Junctionless Phototransistor for High-Performance and Ultra-Low Power Infrared Communication Applications

2016

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In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) is proposed to improve the device performance as well as achieving low power consumption. An overall optical and electrical performances comparison of the proposed junctionless design and the conventional inversionIn the long-haul telecommunication system, the huge power consumption by the traditional transmission wires is an important limitation which degrades the communication system performance in terms of cost and power dissipation [1][2]. However, optical interconnects are considered as a good solution to remedy the problems faced by electric wires and can refashion the inter-chip data communications systems [2][3][4]. The quality of optical receivers in optical wireless communication systems (OWCS) greatly determines the total power consumption in these systems, where it is crucial to develop receivers' with faster and efficient response. In this context, several published works deal with numerous optical receivers' structures based on Schottky barrier photodiode, MSM photodetectors and FET-based phototransistor [5][6][7][8]. This latter is considered as the most common device due to the opportunity for avoiding the high density of the optical circuits namely Trans-Impedance Amplifier (TIA) and the limiting amplifiers used in readout circuit. These amplifiers constitute a serious impediment in high-performance communication compatible with CMOS technology. Previously, different scientific endeavors have originated the OCFET with IV group material or germanium (Ge) sensitive gate [7][8][9][10]. The operating mechanism of this device dwells on exploiting the photo-generated carriers to modulate the band bending in the transistor, and thus changes the output current. However, the Ge-based OCFET operating at an appropriate wavelength of (λ=1.55μm), seems to be preferable for infrared communication due to the low optical band gap and the high carrier mobility offered by the Ge semiconductor. Besides, the excellent compatibility of the Ge material to be growing on Si platform leads to an ultra-high sensing performance, large bandwidth and efficient compatibility with state-of-art CMOS technology [11][12]. Nevertheless, the Ge-based OCFET has constantly well-known optical and electrical concerns namely the low sensitivity, high fabrication cost and power consumption.

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Device Scaling Considerations for Nanophotonic CMOS Global Interconnects

Cited by 38 publications

References 59 publications

Fundamental Scaling Laws in Nanophotonics

Fundamental Scaling Laws in Nanophotonics

Compact Physical Model for Crosstalk in Spin-Wave Interconnects

Numerical Investigation of A New Junctionless Phototransistor for High-Performance and Ultra-Low Power Infrared Communication Applications

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