It's widely recognized that Gate-All-Around (GAA) MOSFETs are considered among the most probable choices to continue CMOS performance boost beyond the conventional scaling frontiers. Such device offers the best controllability of short-channel effects claimed to be the predominant factor limiting how far the downscaling can be achieved. However, the lack of analytic compact models for degraded drain current can easily be notified in literature. Therefore, in this work we investigate the immunity of GAA MOSFET against the hotcarrier-induced degradation effect after considering the stepfunction approximation for interface charge distribution. The importance of including a high-k layer into the device architecture is also studied; the damaged device model presented in this work provides a simple and accurate approach for simulating the circuit behavior after hot-carrier damage.

In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) is proposed to improve the device performance as well as achieving low power consumption. An overall optical and electrical performances comparison of the proposed junctionless design and the conventional inversionIn the long-haul telecommunication system, the huge power consumption by the traditional transmission wires is an important limitation which degrades the communication system performance in terms of cost and power dissipation [1][2]. However, optical interconnects are considered as a good solution to remedy the problems faced by electric wires and can refashion the inter-chip data communications systems [2][3][4]. The quality of optical receivers in optical wireless communication systems (OWCS) greatly determines the total power consumption in these systems, where it is crucial to develop receivers' with faster and efficient response. In this context, several published works deal with numerous optical receivers' structures based on Schottky barrier photodiode, MSM photodetectors and FET-based phototransistor [5][6][7][8]. This latter is considered as the most common device due to the opportunity for avoiding the high density of the optical circuits namely Trans-Impedance Amplifier (TIA) and the limiting amplifiers used in readout circuit. These amplifiers constitute a serious impediment in high-performance communication compatible with CMOS technology. Previously, different scientific endeavors have originated the OCFET with IV group material or germanium (Ge) sensitive gate [7][8][9][10]. The operating mechanism of this device dwells on exploiting the photo-generated carriers to modulate the band bending in the transistor, and thus changes the output current. However, the Ge-based OCFET operating at an appropriate wavelength of (λ=1.55μm), seems to be preferable for infrared communication due to the low optical band gap and the high carrier mobility offered by the Ge semiconductor. Besides, the excellent compatibility of the Ge material to be growing on Si platform leads to an ultra-high sensing performance, large bandwidth and efficient compatibility with state-of-art CMOS technology [11][12]. Nevertheless, the Ge-based OCFET has constantly well-known optical and electrical concerns namely the low sensitivity, high fabrication cost and power consumption.

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